Results 21 to 30 of about 39,831 (163)

Influence of the Semiconductor Devices Cooling Conditions on Characteristics of Selected DC–DC Converters

open access: yesEnergies, 2021
The problem of an influence of cooling conditions of power semiconductor devices on properties of selected DC–DC converters is considered. The new version of electrothermal average model of a diode-transistor switch for SPICE (Simulation Program with ...
Krzysztof Górecki
doaj   +1 more source

Fabrication and Characterization of MoS2/h-BN and WS2/h-BN Heterostructures

open access: yesMicromachines, 2020
The general preparation method of large-area, continuous, uniform, and controllable vdW heterostructure materials is provided in this paper. To obtain the preparation of MoS2/h-BN and WS2/h-BN heterostructures, MoS2 and WS2 material are directly grown on
Tao Han   +5 more
doaj   +1 more source

РОЗВИТОК ПРИНЦИПІВ ПОБУДОВИ ТА ВДОСКОНАЛЕННЯ МАГНІТНО- НАПІВПРОВІДНИКОВИХ ІМПУЛЬСНИХ ПРИСТРОЇВ СИЛОВОЇ ПЕРЕТВОРЮВАЛЬНОЇ ТЕХНІКИ

open access: yesПраці Інституту електродинаміки Національної академії наук України, 2022
The principles of construction and improvement of magnetic-semiconductor devices of power converter technology using a complex synthesis of their elements, keys, nodes, and structures are considered in specific examples.
В.В. Голубєв   +3 more
doaj   +1 more source

High Power Semiconductor Technology Status and Progresses

open access: yes机车电传动, 2021
The evolution of modern Si based high power semiconductor devices and recent progress of novel device structures,as well as the status of wide bandgap semiconductor materials and devices were presented in this paper.
Guoyou LIU   +5 more
doaj  

Technology and application of high-voltage and large-capacity power semiconductor devices

open access: yes机车电传动, 2023
As the core component of electrification process, the power semiconductor device keeps improving, and constantly promotes the development of electrification devices and applications. The key technologies of power semiconductor devices mainly include four
DING Rongjun, DOU Zechun, LUO Haihui
doaj  

Cooling Systems of Power Semiconductor Devices—A Review

open access: yesEnergies, 2022
In this paper, a detailed review of contemporary cooling systems of semiconductor devices is presented. The construction and the principles of operation of selected components of passive and active cooling systems, as well as selected computer tools ...
Krzysztof Górecki   +1 more
doaj   +1 more source

Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

open access: yesIEEE Access, 2021
The expansion of the electric vehicle market is driving the request for efficient and reliable power electronic systems for electric energy conversion and processing. The efficiency, size, and cost of a power system is strongly related to the performance
Giuseppe Iannaccone   +3 more
doaj   +1 more source

A new generation of high-power semiconductor devices [PDF]

open access: yesTehnika, 2014
Due to the constant development of technology and production, silicon semiconductor electronic components reach performance approaching the theoretical characteristics of the material.
Drndarević Vujo R.
doaj   +1 more source

III-nitride power semiconductor technology toward carbon peaking and carbon neutrality goals

open access: yes机车电传动, 2023
Guided by the national development strategy of China about carbon peaking and carbon neutrality, it is necessary to use clean energy and electricity in energy consumption, and power semiconductor technology plays a crucial part in this 2 processes.
LUO Zhuoran   +3 more
doaj  

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

open access: yesMicro & Nano Letters, 2021
An AlInN/GaN superjunction fin‐gate high electron mobility transistor (SJFin‐HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two‐dimensional‐hole‐gas/two‐dimensional‐
Weijun Zhou   +9 more
doaj   +1 more source

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