Results 21 to 30 of about 39,831 (163)
The problem of an influence of cooling conditions of power semiconductor devices on properties of selected DC–DC converters is considered. The new version of electrothermal average model of a diode-transistor switch for SPICE (Simulation Program with ...
Krzysztof Górecki
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Fabrication and Characterization of MoS2/h-BN and WS2/h-BN Heterostructures
The general preparation method of large-area, continuous, uniform, and controllable vdW heterostructure materials is provided in this paper. To obtain the preparation of MoS2/h-BN and WS2/h-BN heterostructures, MoS2 and WS2 material are directly grown on
Tao Han +5 more
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The principles of construction and improvement of magnetic-semiconductor devices of power converter technology using a complex synthesis of their elements, keys, nodes, and structures are considered in specific examples.
В.В. Голубєв +3 more
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High Power Semiconductor Technology Status and Progresses
The evolution of modern Si based high power semiconductor devices and recent progress of novel device structures,as well as the status of wide bandgap semiconductor materials and devices were presented in this paper.
Guoyou LIU +5 more
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Technology and application of high-voltage and large-capacity power semiconductor devices
As the core component of electrification process, the power semiconductor device keeps improving, and constantly promotes the development of electrification devices and applications. The key technologies of power semiconductor devices mainly include four
DING Rongjun, DOU Zechun, LUO Haihui
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Cooling Systems of Power Semiconductor Devices—A Review
In this paper, a detailed review of contemporary cooling systems of semiconductor devices is presented. The construction and the principles of operation of selected components of passive and active cooling systems, as well as selected computer tools ...
Krzysztof Górecki +1 more
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Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges
The expansion of the electric vehicle market is driving the request for efficient and reliable power electronic systems for electric energy conversion and processing. The efficiency, size, and cost of a power system is strongly related to the performance
Giuseppe Iannaccone +3 more
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A new generation of high-power semiconductor devices [PDF]
Due to the constant development of technology and production, silicon semiconductor electronic components reach performance approaching the theoretical characteristics of the material.
Drndarević Vujo R.
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III-nitride power semiconductor technology toward carbon peaking and carbon neutrality goals
Guided by the national development strategy of China about carbon peaking and carbon neutrality, it is necessary to use clean energy and electricity in energy consumption, and power semiconductor technology plays a crucial part in this 2 processes.
LUO Zhuoran +3 more
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An AlInN/GaN superjunction fin‐gate high electron mobility transistor (SJFin‐HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two‐dimensional‐hole‐gas/two‐dimensional‐
Weijun Zhou +9 more
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