Results 151 to 160 of about 87,423 (320)
We propose an optical ferroelectric field‐effect transistor, composed of a MoS2/CIPS heterostructure, demonstrates the feasibility of all‐optical nonvolatile memory, neuromorphic computing, and logic‐in‐memory operations. The device exhibits reversible light‐controlled memory states, retina‐like synaptic plasticity, and wavelength‐selective ...
Jingjie Niu +7 more
wiley +1 more source
Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren +8 more
wiley +1 more source
Symmetrical arrangement of proteins under release-ready vesicles in presynaptic terminals. [PDF]
Radhakrishnan A +5 more
europepmc +1 more source
A flexible freestanding HfO2‐based ferroelectric membrane is achieved via a water‐assisted exfoliation technique using a Sr4Al2O₇ sacrificial layer. The BaTiO3/Hf0.5Zr0.5O2/BaTiO3 heterostructure maintains robust ferroelectricity and exhibits reliable synaptic plasticity.
Han Zhang +13 more
wiley +1 more source
α-Synuclein Impacts on Intrinsic Neuronal Network Activity Through Reduced Levels of Cyclic AMP and Diminished Numbers of Active Presynaptic Terminals. [PDF]
Leite K +6 more
europepmc +1 more source
Dorsal Raphe VIP Neurons Are Critical for Survival‐Oriented Vigilance
DRNVIP neurons in mice and primates are strategically positioned to influence the central extended amygdala via feedback loops. They regulate the excitability of PKC‐δ neurons in the ovBNST and CeA through glutamate release. Their ablation heightens activity in these regions, disrupts active‐phase sleep architecture, enhances risk assessment behaviors ...
Adriane Guillaumin +15 more
wiley +1 more source
Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu +4 more
wiley +1 more source
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal +2 more
wiley +1 more source
Summary: N- and P/Q-type voltage-gated Ca2+ channels are critical for synaptic transmission. While their expression is increased in the dorsal root ganglion (DRG) neuron cell bodies during neuropathic pain conditions, less is known about their synaptic ...
Laurent Ferron +5 more
doaj +1 more source
Pulse-Chase Proteomics of the App Knockin Mouse Models of Alzheimer's Disease Reveals that Synaptic Dysfunction Originates in Presynaptic Terminals. [PDF]
Hark TJ +19 more
europepmc +1 more source

