Results 11 to 20 of about 1,463,362 (312)

A Link between Neutron and Ion Irradiation Hardening for Stainless Austenitic and Ferritic-Martensitic Steels

Metals
Radiation hardening is studied for stainless austenitic and ferritic-martensitic chromium steels after ion and neutron irradiation at various temperatures. Austenitic and ferritic-martensitic steels irradiated up to 30 dpa in various nuclear reactors and
Boris Margolin, Alexander Sorokin, Lyubov Belyaeva   +2 more
doaj   +2 more sources

Radiation Effects in Integrated Circuits, and Radiation Hardening Techniques [PDF]

, 2022
Radiation from natural and artificial elements bombards the earth The radiation environment depends on energy distribution and particle spectra. Radiation affects most electronic components, especially ICs (ICs). High nuclear reactors and space radiation
Muazu, Abdulwakil Auma, Manzi, Eric
core   +1 more source

Double Node Upset Immune RHBD-14T SRAM Cell for Space and Satellite Applications

IEEE Access, 2023
Deep sub-micron memory devices play a crucial role in space electronic applications due to their susceptibility to single-event upset and double-node upset types of soft errors. When a charged particle from space hit a scaled memory circuit, the critical
Pavan Kumar Mukku, Rohit Lorenzo
doaj   +1 more source

Radiation-Resistant Er-Doped Fiber Based on Ge-Ce Co-Doping

IEEE Photonics Journal, 2022
We investigated the radiation responses of Ge-Ce co-doped erbium-doped fibers (EDFs) under gamma radiation with a dose up to 1000 Gy and a dose rate of 0.2 Gy/s.
Chi Cao, Zhimu Gu, Qiang Qiu, Le He, Yingbo Chu, Yingbin Xing, Nengli Dai, Jinyan Li   +7 more
doaj   +1 more source

Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides [PDF]

, 2013
Radiation effects in thick isolation oxides of modern CMOS technologies are investigated using dedicated test structures designed using two commercial foundries.
Martinez, Martial, Gaillardin, M., Goiffon, Vincent, Gaillardin, Marc, Estribeau, Magali, Paillet, Philippe, Goiffon, V., Girard, Sylvain, Marcandella, Claude, Magnan, Pierre, Martinez, M., Magnan, P.   +11 more
core   +1 more source

Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]

, 2009
An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Goiffon, Vincent, Estribeau, Magali, Magnan, Pierre, Magali Estribeau, Vincent Goiffon, Pierre Magnan   +5 more
core   +1 more source

Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes [PDF]

, 2010
This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0,18 µm CMOS processes dedicated to imaging.
Goiffon, Vincent, Magali Estribeau, Estribeau, Magali, Virmontois, Cédric, Pinel, Philippe, Philippe Pinel, Pierre Magnan, Corbière, Franck, Cédric Virmontois, Vincent Goiffon, Cervantes, Paola, Paola Cervantes, Franck Corbière, Magnan, Pierre   +13 more
core   +1 more source

Ionizing radiation effects on CMOS imagers manufactured in deep submicron process [PDF]

, 2008
We present here a study on both CMOS sensors and elementary structures (photodiodes and in-pixel MOSFETs) manufactured in a deep submicron process dedicated to imaging.
Olivier Saint-Pé, Goiffon, Vincent, Nicolas Huger, Frédéric Bernard, Guy Rolland, Bernard, Frédéric, Pierre Magnan, Huger, Nicolas, Corbière, Franck, Rolland, Guy, Saint-Pé, Olivier, Vincent Goiffon, Franck Corbière, Magnan, Pierre   +13 more
core   +1 more source

Radiation Effects on Si:P and SiGe:P Alloys: Electrophysical and Mechanical Characteristics [PDF]

Archives of Metallurgy and Materials
The scope of the study is to investigate the microstructure, electrophysical properties, and amplitude-dependent behavior of internal friction and shear modulus in phosphorus-doped monocrystalline n-Si and n-Si+0.5 at.% Ge alloy, both in their initial ...
Ia Kurashvili, G. Darsavelidze, E. Sanaia, G. Chubinidze, M. Kadaria, N. Gogolashvili   +5 more
doaj   +1 more source

Novel Quadruple Cross-Coupled Memory Cell Designs With Protection Against Single Event Upsets and Double-Node Upsets

IEEE Access, 2019
This paper presents two novel quadruple cross-coupled memory cell designs, namely QCCM10T and QCCM12T, with protection against single event upsets (SEUs) and double-node upsets (DNUs).
Aibin Yan, Jun Zhou, Yuanjie Hu, Jie Cui, Zhengfeng Huang, Patrick Girard, Xiaoqing Wen   +6 more
doaj   +1 more source