Results 11 to 20 of about 72,269 (350)

Development and application of a radiation effect evaluation method of aerospace integrated circuits for radiation hardened by design

He jishu, 2023
Aerospace integrated circuits represent core components of space electronic systems, and anti-radiation hardening is a key technology to ensure the reliable operation of aerospace integrated circuits in the space domain.
ZHENG Hongchao, WANG Liang, LI Zhe, GUO Gang, ZHAO Yuanfu   +4 more
doaj   +1 more source

Nwise and Pwise: 10T Radiation Hardened SRAM Cells for Space Applications With High Reliability Requirements

IEEE Access, 2022
SRAM cells are widely used to design memory blocks of, e.g., caches, register files, and translation lookaside buffers. Depending on the SRAM application, the design requirements are different.
Azam Seyedi, Snorre Aunet, Per Gunnar Kjeldsberg   +2 more
doaj   +1 more source

Collisional Hardening of Compact Binaries in Globular Clusters [PDF]

, 2006
We consider essential mechanisms for orbit-shrinkage or "hardening" of compact binaries in globular clusters to the point of Roche-lobe contact and X-ray emission phase, focussing on the process of collisional hardening due to encounters between binaries
Angelini, Clayton, D'Inverno, Ghosh, Goodman, Gradshteyn, Heggie, Hut, Hut, Hut, Hut, Kippenhan, Kraicheva, P. Ghosh, Paczyński, Podsiadlowski, Pooley, Portegies Zwart, Portegies Zwart, S. Banerjee, Shull, Spitzer, Spruit, Van Den Heuvel, Van Den Heuvel, Van Der Sluys, Verbunt, Verbunt, Verbunt, Verbunt, White   +30 more
core   +3 more sources

Double Node Upset Immune RHBD-14T SRAM Cell for Space and Satellite Applications

IEEE Access, 2023
Deep sub-micron memory devices play a crucial role in space electronic applications due to their susceptibility to single-event upset and double-node upset types of soft errors. When a charged particle from space hit a scaled memory circuit, the critical
Pavan Kumar Mukku, Rohit Lorenzo
doaj   +1 more source

Radiation Effects on Si:P and SiGe:P Alloys: Electrophysical and Mechanical Characteristics [PDF]

Archives of Metallurgy and Materials
The scope of the study is to investigate the microstructure, electrophysical properties, and amplitude-dependent behavior of internal friction and shear modulus in phosphorus-doped monocrystalline n-Si and n-Si+0.5 at.% Ge alloy, both in their initial ...
Ia Kurashvili, G. Darsavelidze, E. Sanaia, G. Chubinidze, M. Kadaria, N. Gogolashvili   +5 more
doaj   +1 more source

Radiation-Resistant Er-Doped Fiber Based on Ge-Ce Co-Doping

IEEE Photonics Journal, 2022
We investigated the radiation responses of Ge-Ce co-doped erbium-doped fibers (EDFs) under gamma radiation with a dose up to 1000 Gy and a dose rate of 0.2 Gy/s.
Chi Cao, Zhimu Gu, Qiang Qiu, Le He, Yingbo Chu, Yingbin Xing, Nengli Dai, Jinyan Li   +7 more
doaj   +1 more source

Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides [PDF]

, 2013
Radiation effects in thick isolation oxides of modern CMOS technologies are investigated using dedicated test structures designed using two commercial foundries.
Estribeau, Magali, Gaillardin, Marc, Girard, Sylvain, Goiffon, Vincent, Magnan, Pierre, Marcandella, Claude, Martinez, Martial, Paillet, Philippe   +7 more
core   +3 more sources

Novel Quadruple Cross-Coupled Memory Cell Designs With Protection Against Single Event Upsets and Double-Node Upsets

IEEE Access, 2019
This paper presents two novel quadruple cross-coupled memory cell designs, namely QCCM10T and QCCM12T, with protection against single event upsets (SEUs) and double-node upsets (DNUs).
Aibin Yan, Jun Zhou, Yuanjie Hu, Jie Cui, Zhengfeng Huang, Patrick Girard, Xiaoqing Wen   +6 more
doaj   +1 more source

Hardening electronic devices against very high total dose radiation environments [PDF]

, 1972
The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made
Buchanan, B., Dolan, R., Roosild, S., Shedd, W.   +3 more
core   +2 more sources

Heavy-Ion Radiation Characteristics of DDR2 Synchronous Dynamic Random Access Memory Fabricated in 56 nm Technology [PDF]

Journal of Astronomy and Space Sciences, 2012
We developed a mass-memory chip by staking 1 Gbit double data rate 2 (DDR2) synchronous dynamic random access memory (SDRAM) memory core up to 4 Gbit storage for future satellite missions which require large storage for data collected during the mission ...
Kwangsun Ryu, Mi-Young Park, Jang-Soo Chae, In Lee, Yukio Uchihori, Hisashi Kitamura, Takeshi Takashima   +6 more
doaj   +1 more source