Results 211 to 220 of about 13,577 (265)
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International Journal of Electronics, 2008
Historically, specialized foundry processes have been utilized to produce radiation hardened microelectronics. Radiation hardness by design techniques have been shown to be capable of producing devices of sufficient hardness to resist the deleterious effects of the natural radiation environment of space utilizing standard commercial processes.
J. W. Gambles +2 more
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Historically, specialized foundry processes have been utilized to produce radiation hardened microelectronics. Radiation hardness by design techniques have been shown to be capable of producing devices of sufficient hardness to resist the deleterious effects of the natural radiation environment of space utilizing standard commercial processes.
J. W. Gambles +2 more
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Radiation-hardened phototransistor
IEEE Transactions on Nuclear Science, 1991A radiation-hardened, monolithic, silicon bipolar phototransistor has been developed and produced. Common emitter current gain at 2 mA collector current is 225 and remains above 140 after irradiation of 1 E13 n/sq cm or 1 Mrad(Si). Device photoresponse to 820 nm light decreases about 30% after 1 Mrad(Si) exposure and 55% after 1 E13 n/sq cm irradiation
W.T. Matzen, R.A. Hawthorne, W.T. Kilian
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Radiation-Hardened Microelectronics
AT&T Technical Journal, 1991Many nuclear power, defense, and space applications require radiation-hardened integrated circuits. In 1986, Sandia's expertise in microelectronics radiation hardening was combined with ATT the new process is running at AT&T's Allentown, Pennsylvania, MOS V production facility, and the technology has been transferred to Sandia's Microelectronics ...
James L. Jorgensen, David S. Yaney
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2015
The major work introduced in this book is to develop a megagray-radiation-tolerant ps-resolution time-to-digital converter (TDC) for a light detection and ranging (LIDAR) application. In this chapter, major radiation effects in complementary metal–oxide–semiconductor (CMOS) integrated circuits (ICs) are introduced. The total ionizing dose (TID) effects
Ying Cao, Paul Leroux, Michiel Steyaert
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The major work introduced in this book is to develop a megagray-radiation-tolerant ps-resolution time-to-digital converter (TDC) for a light detection and ranging (LIDAR) application. In this chapter, major radiation effects in complementary metal–oxide–semiconductor (CMOS) integrated circuits (ICs) are introduced. The total ionizing dose (TID) effects
Ying Cao, Paul Leroux, Michiel Steyaert
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Technology development for the radiation hardening of robots
Proceedings 1999 IEEE/RSJ International Conference on Intelligent Robots and Systems. Human and Environment Friendly Robots with High Intelligence and Emotional Quotients (Cat. No.99CH36289), 2003A radiation tolerant KAEROT/m2 system is being developed by a team composed of engineers and scientists from the Korea Atomic Energy Research Institute (KAERI) and Inventors' Enterprise Inc. The team is developing radiation tolerant data acquisition and control boards for CANDU reactor inspection. This paper outlines the work performed to harden a data
O. U. Youk +4 more
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Nonvolatile radiation hardened DICE latch
2015 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015Spintronic-based integrated circuits have been widely considered as potential candidates for space application, due to the fact that their core devices (e.g. magnetic tunnel junction, MTJ) are intrinsic insensitive to radiation effects. However, their CMOS peripheral circuits are still vulnerable to radiation effects.
Tingting Pang +5 more
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On the saturation of radiation hardening
Physics Letters A, 1969Abstract A model of saturation of radiation hardening is given. This model suggests that saturation of the thermal hardening component should occur at different fluence levels than would the athermal component.
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Transistor sizing for radiation hardening
2004 IEEE International Reliability Physics Symposium. Proceedings, 2004This paper presents an efficient and accurate numerical analysis technique to simulate single event upsets (SEUs) in logic circuits. Experimental results that show the method is accurate to within 10% of the results obtained using SPICE are provided.
null Quming Zhou, K. Mohanram
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Radiation Hardened by Design Sense Amplifier
2019This paper presents a fully symmetrical radiation hardened sense amplifier is designed in and 32 nm FinFET Double gate PTM technology to tolerate single node upset and multiple-node upset.circuit. A 9 pC charge is used at critical node of the sense amplifier to analyse Single Event Transient.
Avinash Verma, Gaurav Kaushal
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Radiation Hardening by Process
2017This chapter describes the approaches for optimization of semiconductor device fabrication processes and structures to mitigate radiation effects in advanced silicon-based technologies, primarily complementary metal oxide semiconductor (CMOS). It discusses effects and mitigation approaches related to insulators, active device regions, and process ...
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