Results 31 to 40 of about 843,490 (307)

Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima

, 2004
High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance ...
Johnson, W. B., Mani, R. G., Narayanamurti, V., Smet, J. H., Umansky, V., von Klitzing, K.   +5 more
core   +1 more source

Microwave photoresponse in the 2D electron system caused by intra-Landau level transitions

, 2004
The influence of microwave radiation on the DC-magnetoresistance of 2D-electrons is studied in the regime beyond the recently discovered zero resistance states when the cyclotron frequency exceeds the radiation frequency.
A. L. Zakharov, A. L. Zakharov, J. H. Smet, K. von Klitzing, S. I. Dorozhkin, S. I. Dorozhkin, V. B. Shikin, V. I. Ryzhii, V. I. Ryzhii, V. I. Ryzhii, V. I. Ryzhii, V. Umansky   +11 more
core   +1 more source

Influence of gamma radiation on the electrical and mechanical properties of on-board systems cables

Electrical engineering & Electromechanics
Introduction. Electrical and fiber-optic cables of on-board systems for transmitting monitoring, control and communication signals are increasingly used in nuclear power plants, aircraft systems and military applications.
G. V. Bezprozvannych, I. A. Pushkar
doaj   +1 more source

Understanding cisplatin resistance using cellular models [PDF]

, 2007
Many mechanisms of cisplatin resistance have been proposed from studies of cellular models of resistance including changes in cellular drug accumulation, detoxification of the drug, inhibition of apoptosis and repair of the DNA adducts.
Davey, Mary W., Stordal, Britta
core   +2 more sources

Integrated double-sided silicon microstrip detectors [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2011
The problems of design, technology and manufacturing double-sided silicon microstrip detectors using standard equipment production line in mass production of silicon integrated circuits are considered.
Perevertailo V. L.
doaj  

microRNAs identified in prostate cancer: Correlative studies on response to ionizing radiation

Molecular Cancer, 2020
As the most frequently diagnosed non-skin cancer in men and a leading cause of cancer-related death, understanding the molecular mechanisms that drive treatment resistance in prostate cancer poses a significant clinical need.
Maureen Labbé, Christianne Hoey, Jessica Ray, Vincent Potiron, Stéphane Supiot, Stanley K. Liu, Delphine Fradin   +6 more
doaj   +1 more source

Proton pump inhibitors and sensitization of cancer cells to radiation therapy

Frontiers in Oncology, 2022
This review article outlines six molecular pathways that confer resistance of cancer cells to ionizing radiation, and describes how proton pump inhibitors (PPIs) may be used to overcome radioresistance induced by alteration of one or more of these ...
Kassidy A. Hebert, Kassidy A. Hebert, Mark D. Bonnen, Yohannes T. Ghebre, Yohannes T. Ghebre, Yohannes T. Ghebre   +5 more
doaj   +1 more source

Bolometric response in graphene based superconducting tunnel junctions

, 2011
We fabricate graphene-TiOx-Al tunnel junctions and characterize their radio frequency response. Below the superconducting critical temperature of Al and when biased within the superconducting gap, the devices show enhanced dynamic resistance which ...
Du, Xu, Kumaravadivel, Piranavan, Nielsen, Bent, Vora, Heli   +3 more
core   +1 more source

Increasing the radiation resistance of single-crystal silicon epitaxial layers

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2014
The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109–1012 m–2.
Sh. D. Kurmashev, O. A. Kulinich, G. I. Brusenskaya, A. V. Verem’eva   +3 more
doaj   +1 more source

INCREASING RADIATION RESISTANCE OF MEMORY DEVICES BASED ON AMORPHOUS SEMICONDUCTORS

Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska, 2020
A memory cell structure is proposed that uses a Schottky barrier thin film transistor based on an amorphous semiconductor as a junction element, and a chalcogenide glassy semiconductor film as a switching element.
Vasyl Kychak, Ivan Slobodian, Victor Vovk   +2 more
doaj   +1 more source