Random telegraph-signal noise in junctionless transistors [PDF]
Applied Physics Letters, 2011 Random telegraph-signal noise (RTN) is measured in junctionless metal-oxide-silicon field-effect transistors (JL MOSFETs) as a function of gate and drain voltage and temperature.
Akhavan, Nima Dehdashti +5 more
core +3 more sources
Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise [PDF]
IEEE Transactions on Electron Devices, 2003 In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions).
Klumperink, Eric A.M. +3 more
core +5 more sources
What can we learn when fitting a simple telegraph model to a complex gene expression model? [PDF]
PLoS Computational BiologyIn experiments, the distributions of mRNA or protein numbers in single cells are often fitted to the random telegraph model which includes synthesis and decay of mRNA or protein, and switching of the gene between active and inactive states.
Feng Jiao +6 more
doaj +2 more sources
High-Temperature Annealing of Random Telegraph Noise in a Stacked CMOS Image Sensor After Hot-Carrier Stress [PDF]
SensorsThis paper studies the temperature effects on device aging, particularly the random telegraph noise (RTN) degradation and the threshold voltage (Vt) shift in a stacked CMOS image sensor (CIS) caused by hot-carrier stress (HCS). Measurements indicate that
Calvin Yi-Ping Chao +8 more
doaj +2 more sources
Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators
IEEE Journal of the Electron Devices Society, 2022 In highly scaled MOSFETs, random telegraph noise (RTN) can decrease the reliability and yield of circuits. RTN is produced by charge trapping, which in large devices results in $1/f$ noise.
Mauricio Banaszeski da Silva +2 more
doaj +1 more source
Low-temperature enhanced OFF-state telegraph noise in defect engineered ReRAMs
APL Materials, 2023 The OFF-state retention characteristics of Pt/NiOx–(Ar)/NiOx–(Ar + O2)/Pt stacking resistive random access memory structures were measured as a function of temperature between 300 and 190 K.
H. S. Alagoz +3 more
doaj +1 more source
Optimization of Random Telegraph Noise Characteristics in Memristor for True Random Number Generator
Advanced Intelligent Systems, 2023 Memristor devices can be utilized for various computing applications, and stochastic computing is one of them. The intrinsic stochastic characteristics of the memristor cause unpredictable current fluctuations by the capture and emission of electrons in ...
Min Suk Song +5 more
doaj +1 more source
FROM PERSISTENT RANDOM WALK TO THE TELEGRAPH NOISE [PDF]
Stochastics and Dynamics, 2010 We study a family of memory-based persistent random walks and we prove weak convergences after space-time rescaling. The limit processes are not only Brownian motions with drift. We have obtained a continuous but non-Markov process (Zt) which can be easily expressed in terms of a counting process (Nt).
Herrmann, Samuel, Vallois, Pierre
openaire +3 more sources
Resonance fluorescence of noisy systems
New Journal of Physics, 2023 Light scattering from resonantly or nearly resonantly excited systems, known as resonance fluorescence (RF), has been gaining importance as a versatile tool for investigating quantum states of matter and readout of quantum information, recently including
Rafał A Bogaczewicz +1 more
doaj +1 more source
RTNinja: A generalized machine learning framework for analyzing random telegraph noise signals in nanoelectronic devices [PDF]
APL Machine LearningRandom telegraph noise is a prevalent variability phenomenon in nanoelectronic devices, arising from stochastic carrier exchange at defect sites and critically impacting device reliability and performance.
Anirudh Varanasi +3 more
doaj +1 more source