Results 91 to 100 of about 55,048 (148)

Microwave etching device for reactive ion etching

Materials Science and Engineering: A, 1991
Abstract Electron cycloton resonance (ECR) plasmas are different from glow dischargeplasmas and introduce new complexities and possibilities. For dry etching processes (reactive ion etching), the operation in a low pressure regime and the high etch rates achievable at low ion energies,which can be controlled by an independently adjustable r.f.
openaire   +1 more source

Reactive ion etching for VLSI

1980 International Electron Devices Meeting, 1980
The requirements of VLSI have lead to the development of etching techniques that are capable of transferring ever smaller dimension patterns into the various films that make up a ...
openaire   +1 more source

Reactive ion etching for failure analysis applications

30th Annual Proceedings Reliability Physics 1992, 1992
An attempt to develop and to optimize reactive ion etch processes for failure analysis applications is discussed. Reactive ion etching (RIE) provides several advantages over wet and plasma etching. Delayering of interlevel dielectric and passivation films with RIE results in anisotropic sidewalls.
Marsha T. Abramo, Erica B. Roy, Steven M. LeCours   +2 more
openaire   +1 more source

Ultrahigh Resolution Titanium Deep Reactive Ion Etching

ACS Applied Materials & Interfaces, 2017
Titanium (Ti) represents a promising new material for microelectromechanical systems (MEMS) because of its unique properties. Recently, this has been made possible with the advent of processes that enable deep reactive ion etching (DRIE) of high-aspect-ratio (HAR) structures in bulk Ti substrates.
Bryan W. K. Woo, Shannon C. Gott, Ryan A. Peck, Dong Yan, Mathias W. Rommelfanger, Masaru P. Rao   +5 more
openaire   +2 more sources

Colloidal Lithographic Nanopatterning via Reactive Ion Etching

Journal of the American Chemical Society, 2004
We report here a novel colloidal lithographic approach to the fabrication of nonspherical colloidal particle arrays with a long-range order by selective reactive ion etching (RIE) of multilayered spherical colloidal particles. First, layered colloidal crystals with different crystal structures (or orientations) were self-organized onto substrates. Then,
Choi, DG, Yu, HK, Jang, SG, Yang, SM Yang, Seung-Man   +3 more
openaire   +3 more sources

Reactive ion etching and plasma etching of tungsten

Microelectronic Engineering, 1993
Abstract Tungsten etching has been studied in audio frequent plasmas with NF3-O2 and SF6-O2 mixtures. The influence of etch mode, gas flows, pressure and power has been investigated. It is possible to etch tungsten chemically but large concentrations of free fluorine are needed. These are supplied more easily by NF3 than by SF6.
P. Verdonck, G. Brasseur, J. Swart
openaire   +1 more source

Reactive ion etching and deep reactive ion etching processes

2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022), 2022
YiHan WU, HaiLin He
openaire   +1 more source

Deep reactive ion etch conditioning recipe

SPIE Proceedings, 2004
Deep Reactive Ion Etch (DRIE) has historically been regarded as a process possessing inherent variable response. These varying responses include etch rate, mask selectivity, etch depth uniformity across the wafer, and the overall profile of the features being etched. Several factors are thought to lend themselves to this observed variation.
Matthew Wasilik, Ning Chen
openaire   +1 more source

Reactive Ion Etching Of Silicon Dioxide

SPIE Proceedings, 1987
The etch rates of thermally grown and CVD-deposited silicon dioxide were studied in three different reactive ion etch reactors, parallel plate, hexode and single wafer. Carbon-fluorine chemistry was used, and each reactor operated at 13.56 MHz. Assuming the etch rate to be a linear function of the DC bias and using an empirical relationship between ...
Peter C. Sukanek, Glynis Sullivan
openaire   +1 more source

Deep Reactive Ion Etching of Silicon

MRS Proceedings, 1998
AbstractThe ability to etch deep trenches in silicon while controlling not only the profile of etched features but also the etching rate, uniformity and selectivity enable us to expand the number and scope of MEMS devices. In fact, the increase of MEMS applications in different and varied fields requiring deep silicon etching or high aspect ratio ...
A. A. Ayón, K.-S Chen, K. A. Lohner, S. M. Spearing, H. H. Sawin, M. A. Schmidt   +5 more
openaire   +1 more source