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Reactive ion etching and deep reactive ion etching processes
2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022), 2022YiHan WU, HaiLin He
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
The damage and contamination effects present in silicon substrates from both reactive ion etching and magnetron-enhanced reactive ion etching of SiO2 have been examined for various overetch percentages using spectroscopic ellipsometry (SE) and secondary ion mass spectroscopy (SIMS).
Tieer Gu +6 more
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The damage and contamination effects present in silicon substrates from both reactive ion etching and magnetron-enhanced reactive ion etching of SiO2 have been examined for various overetch percentages using spectroscopic ellipsometry (SE) and secondary ion mass spectroscopy (SIMS).
Tieer Gu +6 more
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Classification of etching mechanism in reactive ion beam etch
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1989Etching characteristics for GaAs and InP using an ultrahigh vacuum reactive ion beam etching (UHV-RIBE) system have been classified. Using a horizontal electron cyclotron resonance (ECR) ion source, a uniform ion beam covering a large area is obtained, and etching at low pressure (≂10−5 Torr) has become possible.
T. Tadokoro, F. Koyama, Kenichi Iga
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Technology of reactive ion etching
1998Abstract The original meaning of ‘etching’ is ‘to eat’; the process of removing something from an object. Moreover, it is impressive that another original meaning of it is ‘to feed’. In fact, reactive ion etching (RIE) consists of two processes; ‘to eat’ and ‘to feed’.
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Etch mechanism in the reactive ion etching of silicon nitride
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1991Reactive ion etching of silicon nitride with CHF3/O2 plasmas has been studied in a hexode reactor and compared to silicon dioxide etching. Measurements of etch rates as a function of gas composition and pressure were combined with Langmuir probe data for the ion flux to the substrate to give etch yields (number of substrate atoms removed per bombarding
J. Dulak +2 more
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The significance of reactive ions and reactive neutrals in ion-beam-assisted etching
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1985Using a custom designed beam analyzer system, the ionic species from a broad beam ion source have been measured under various etching conditions. In broad beam ion-beam-assisted etching (IBAE), it was observed that up to 25% of the ionic species are from the reactive neutral component backdiffusing into the ion source through the extraction grids ...
J. D. Chinn, E. D. Wolf
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Reactive Ion Etching Of Silicon Dioxide
SPIE Proceedings, 1987The etch rates of thermally grown and CVD-deposited silicon dioxide were studied in three different reactive ion etch reactors, parallel plate, hexode and single wafer. Carbon-fluorine chemistry was used, and each reactor operated at 13.56 MHz. Assuming the etch rate to be a linear function of the DC bias and using an empirical relationship between ...
Peter C. Sukanek, Glynis Sullivan
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Radial Etch Rate Nonuniformity in Reactive Ion Etching
Journal of The Electrochemical Society, 1984A study was performed to determine some of the causes of the edge‐to‐center "bullseye" clearing pattern, in which the etch rate decreases monotonically from the wafer periphery to its center, observed when certain films are etched in a parallel‐plate reactive ion etching system.
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Lithography and Reactive Ion Etching in Microfabrication
1995The term “microfabrication” has been used to denote the technology for manufacturing integrated micro-circuits and microsystems. During the last 30 years the advanced micro-electronics could not maintain its place without microfabrication technology and this is also the case for the present and for the future.
I. W. Rangelow, P. Hudek
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