Results 221 to 230 of about 1,889,328 (287)

Electrochemical discharge etching of porous tungsten emitters for field emission electric propulsion applications. [PDF]

Sci Rep
Seo WG, Kuk JW, Kim H, Kang D, Huh J.
europepmc   +1 more source

One-Step Radical-Intensified Selective Etching (RISE) Strategy for High-Yield Synthesis of Monolayer MXene with Tailored Nanoholes. [PDF]

Angew Chem Int Ed Engl
Liu C, Zhang H, Sikdar A, Pang K, Ma G, Xi K, Ding S, Yuan J, Zhang M.   +8 more
europepmc   +1 more source

Geometry-Tunable Nanoneedle Arrays Reveal Membrane Penetration Mechanics for Intracellular Delivery. [PDF]

Biosensors (Basel)
Zhang X, Wang Z, Chen Y, Song L, Ma Y, Wang J.   +5 more
europepmc   +1 more source

HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (-112) β-Ga₂O₃. [PDF]

Sci Technol Adv Mater
Oshima T, Oshima Y.
europepmc   +1 more source

Sidewall Patterning in 3D Micro/Nanosystems: A Review. [PDF]

Micromachines (Basel)
Liu X, Luo C.
europepmc   +1 more source

Micro- and Nanopatterning of Highly Conductive PEDOT Thin Films. [PDF]

Macromol Rapid Commun
Bisio F, Akdemir SB, Bonino V, Michieletti F, De Leo N, Brunella V, Comoretto D, Angelini A, Sparnacci K.   +8 more
europepmc   +1 more source

Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching

MRS Proceedings, 1997
ABSTRACTDry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied ...
Jae-Won Lee, Hyong-Soo Park, Yong-Jo Park, Myong-Cheol Yoo, Tae-Il Kim, Hyeon-Soo Kim, Geun-Yong Yeom   +6 more
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Kinetics of Reactive Ion Etching of Polymers in an Oxygen Plasma: The Importance of Direct Reactive Ion Etching

MRS Proceedings, 1993
AbstractThe etching of polymer films in oxygen-based plasmas has been studied between 5 and 100 mTorr in a reactive ion etch reactor using Langmuir probe and optical actinometry measurements. Results for the etch yield (the number of carbon atoms removed per incident ion) are analyzed in terms of a surface-chemical model for ion-enhanced etching ...
Sandra W. Graham, Christoph SteinbrüChel   +1 more
openaire   +2 more sources

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Reactive Ion Etching and Ion Beam Etching for Ferroelectric Memories

Integrated Ferroelectrics, 2004
The fabrication of the FeRAM requires the development of etching processes for ferroelectric thin films and electrodes as well as deposition processes. But different etching methods have different impacts such as resolution and process-induced damages. In this paper, reactive ion etching (RIE) and ion beam etching (IBE) for ferroelectric thin films and
TIAN-QI SHAO, TIAN-LING REN, LI-TIAN LIU, JUN ZHU, ZHI-JIAN LI   +4 more
openaire   +1 more source

Reactive ion etching and plasma etching of tungsten

Microelectronic Engineering, 1993
Abstract Tungsten etching has been studied in audio frequent plasmas with NF3-O2 and SF6-O2 mixtures. The influence of etch mode, gas flows, pressure and power has been investigated. It is possible to etch tungsten chemically but large concentrations of free fluorine are needed. These are supplied more easily by NF3 than by SF6.
P. Verdonck, G. Brasseur, J. Swart
openaire   +1 more source