Results 231 to 240 of about 1,889,328 (287)

Reactive ion etching of niobium

Journal of Vacuum Science and Technology, 1981
The reactive gases CBrF3 and CF4 have both been found to be effective in the reactive ion etching of niobium. At relatively high pressures, 100 mTorr, rapid etching with a small degree of undercutting occurs at moderate rf power levels. At lower pressures, higher rf power levels, ≳1 W/ cm2, are required but vertical edge profiles result.
T. T. Foxe, B. D. Hunt, C. Rogers, A. W. Kleinsasser, R. A. Buhrman   +4 more
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Reactive-Ion Etching

Physics Today, 1986
Our ability to develop and build ever smaller microelectronic devices depends strongly on the capability to generate a desired device pattern in an image layer (photoresist) by lithography and then to transfer this pattern into the layers of materials of which the device consists.
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Reactive ion etching of silicon

Journal of Vacuum Science and Technology, 1979
Reactive ion etching of silicon substrates in a plasma containing chlorinated species does not result in undercut of a permanent mask. When the silicon is very highly doped it behaves as a different material and undercut has been observed. This phenomenon will be discussed.
G. C. Schwartz, P. M. Schaible
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Reactive Ion-Beam Etching

1984
Publisher Summary This chapter discusses reactive ion-beam etching (RIBE), which is the technique of removing material from a surface by impinging on it a beam of chemically reactive ions. In fact, RIBE has played a dual role in the evolution of dry-etching techniques for electronic device and integrated circuit applications. For as well as providing
B.A. HEATH, T.M. MAYER
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Reactive ion etching of LiNbO3

Applied Physics Letters, 1981
We describe the reactive ion etching of LiNbO3 in gas mixtures containing CCl2F2, CF4, O2, and Ar. The effects of gas composition and pressure, in the range 1–10-μm total pressure are discussed. Because it is possible to replicate fine features (∼2000 Å) with control of etch profiles, we expect the process to be used for three-dimensional patterning of
J. L. Jackel, R. E. Howard, E. L. Hu, S. P. Lyman   +3 more
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Role of ions in reactive ion etching

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1994
Energetic ion bombardment is responsible for the anisotropic etching which can be obtained in reactive ion etching. This has been recognized for many years but the detailed mechanisms involved in this process are still not well understood. In this paper, the various phenomena resulting from ion bombardment of a surface in a reactive gas glow discharge ...
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Microwave etching device for reactive ion etching

Materials Science and Engineering: A, 1991
Abstract Electron cycloton resonance (ECR) plasmas are different from glow dischargeplasmas and introduce new complexities and possibilities. For dry etching processes (reactive ion etching), the operation in a low pressure regime and the high etch rates achievable at low ion energies,which can be controlled by an independently adjustable r.f.
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Reactive ion etching for VLSI

1980 International Electron Devices Meeting, 1980
The requirements of VLSI have lead to the development of etching techniques that are capable of transferring ever smaller dimension patterns into the various films that make up a ...
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Reactive ion etching of diamond

Applied Physics Letters, 1989
A reliable means of removing surface layers of diamond is of significant importance for microelectronics as well as for other applications such as polishing of the diamond surface. Preliminary studies using reactive ion etching with O2 and H2 showed etching rates of the order of 560 Å/min for thin carbon films and 350 Å/min for natural type II-A ...
G. S. Sandhu, W. K. Chu
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Reactive ion etching for failure analysis applications

30th Annual Proceedings Reliability Physics 1992, 1992
An attempt to develop and to optimize reactive ion etch processes for failure analysis applications is discussed. Reactive ion etching (RIE) provides several advantages over wet and plasma etching. Delayering of interlevel dielectric and passivation films with RIE results in anisotropic sidewalls.
Marsha T. Abramo, Erica B. Roy, Steven M. LeCours   +2 more
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