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Dimensionless parameters of reactive ion etching
Proceedings., 39th Electronic Components Conference, 2003The derivation and character of dimensionless parameters for the semiconductor manufacturing process of reactive ion etching (RIE) in generic form are discussed. Data from characterizations of a variety of films processed under a variety of etching regimes to establish the validity of derived parameters are presented. Fundamental realizations regarding
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Reactive Ion Etching of Tantalum in Silicon Tetrachloride
SSRN Electronic Journal, 2022Asaad K. Edaan Al-mashaal +1 more
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A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide
Materials, 2022Mariusz Sochacki +2 more
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Smooth and high-rate reactive ion etching of diamond
Diamond and Related Materials, 2002Yoshiki Nishibayashi +2 more
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Molecular dynamics simulation of Si and SiO reactive ion etching by fluorine-rich ion species
Surface and Coatings Technology, 2019Satoshi Hamaguchi +2 more
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Deep reactive ion etching as a tool for nanostructure fabrication Available to Purchase
Journal of Vacuum Science & Technology B, 2009Richard Fu +2 more
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Selective reactive ion etching of GaAs on AlGaAs using CCl2F2 and He
Journal of Vacuum Science & Technology B, 1988Alan Seabaugh
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