Results 81 to 90 of about 55,048 (148)
Scientific Reports“In situ” argon (Ar+) ion non-reactive successive sputtering/etching process was used to produce ultrathin films of indium tin oxide nanomaterial.
Sekhar Chandra Ray, W. F. Pong
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Tilted Micro Air Jet for Flow Control
, 2009 In this paper, we present an interesting method to microfabricate a tilted micro air jet generator. We used the well-know deep reactive ion etching (DRIE) technique in order to realize in a silicon substrate a double side etching.
Malapert, Julien +3 more
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1984
Publisher Summary This chapter discusses reactive ion-beam etching (RIBE), which is the technique of removing material from a surface by impinging on it a beam of chemically reactive ions. In fact, RIBE has played a dual role in the evolution of dry-etching techniques for electronic device and integrated circuit applications. For as well as providing
B.A. HEATH, T.M. MAYER
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Publisher Summary This chapter discusses reactive ion-beam etching (RIBE), which is the technique of removing material from a surface by impinging on it a beam of chemically reactive ions. In fact, RIBE has played a dual role in the evolution of dry-etching techniques for electronic device and integrated circuit applications. For as well as providing
B.A. HEATH, T.M. MAYER
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Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching
MRS Proceedings, 1997ABSTRACTDry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied ...
Jae-Won Lee +6 more
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Reactive Ion Etching and Ion Beam Etching for Ferroelectric Memories
Integrated Ferroelectrics, 2004The fabrication of the FeRAM requires the development of etching processes for ferroelectric thin films and electrodes as well as deposition processes. But different etching methods have different impacts such as resolution and process-induced damages. In this paper, reactive ion etching (RIE) and ion beam etching (IBE) for ferroelectric thin films and
TIAN-QI SHAO +4 more
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Reactive ion etching of silicon
Journal of Vacuum Science and Technology, 1979Reactive ion etching of silicon substrates in a plasma containing chlorinated species does not result in undercut of a permanent mask. When the silicon is very highly doped it behaves as a different material and undercut has been observed. This phenomenon will be discussed.
G. C. Schwartz, P. M. Schaible
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Reactive ion etching of LiNbO3
Applied Physics Letters, 1981We describe the reactive ion etching of LiNbO3 in gas mixtures containing CCl2F2, CF4, O2, and Ar. The effects of gas composition and pressure, in the range 1–10-μm total pressure are discussed. Because it is possible to replicate fine features (∼2000 Å) with control of etch profiles, we expect the process to be used for three-dimensional patterning of
J. L. Jackel +3 more
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Physics Today, 1986
Our ability to develop and build ever smaller microelectronic devices depends strongly on the capability to generate a desired device pattern in an image layer (photoresist) by lithography and then to transfer this pattern into the layers of materials of which the device consists.
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Our ability to develop and build ever smaller microelectronic devices depends strongly on the capability to generate a desired device pattern in an image layer (photoresist) by lithography and then to transfer this pattern into the layers of materials of which the device consists.
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Reactive ion etching of diamond
Applied Physics Letters, 1989A reliable means of removing surface layers of diamond is of significant importance for microelectronics as well as for other applications such as polishing of the diamond surface. Preliminary studies using reactive ion etching with O2 and H2 showed etching rates of the order of 560 Å/min for thin carbon films and 350 Å/min for natural type II-A ...
G. S. Sandhu, W. K. Chu
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Reactive ion etching of niobium
Journal of Vacuum Science and Technology, 1981The reactive gases CBrF3 and CF4 have both been found to be effective in the reactive ion etching of niobium. At relatively high pressures, 100 mTorr, rapid etching with a small degree of undercutting occurs at moderate rf power levels. At lower pressures, higher rf power levels, ≳1 W/ cm2, are required but vertical edge profiles result.
T. T. Foxe +4 more
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