Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim +4 more
wiley +1 more source
Multilayer structures comprising of SiO2/SiGe/SiO2 and containing SiGe nanoparticles were obtained by depositing SiO2 layers using reactive direct current magnetron sputtering (dcMS), whereas, Si and Ge were co-sputtered using dcMS and high-power impulse
Muhammad Taha Sultan +7 more
doaj +1 more source
Electrospun Poly-L-Lactic Acid Scaffolds Surface-Modified via Reactive Magnetron Sputtering Using Different Mixing Ratios of Nitrogen and Xenon. [PDF]
Maryin PV +7 more
europepmc +1 more source
Topological Materials and Related Applications
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
Exciton Luminescence and Optical Properties of Nanocrystalline Cubic Y2O3 Films Prepared by Reactive Magnetron Sputtering. [PDF]
Zatsepin A +6 more
europepmc +1 more source
Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe +11 more
wiley +1 more source
Study of wide bandgap SnOx thin films grown by a reactive magnetron sputtering via a two-step method. [PDF]
Zakaria Y +6 more
europepmc +1 more source
Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley +1 more source
A closed‐loop, data‐driven approach facilitates the exploration of high‐performance Si─Ge─Sn alloys as promising fast‐charging battery anodes. Autonomous electrochemical experimentation using a scanning droplet cell is combined with real‐time optimization to efficiently navigate composition space.
Alexey Sanin +7 more
wiley +1 more source
High Rate Deposition of Piezoelectric AlScN Films by Reactive Magnetron Sputtering from AlSc Alloy Targets on Large Area. [PDF]
Barth S +5 more
europepmc +1 more source

