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Semiconductor Packaging [PDF]

, 2016
In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package.
Chen, Andrea, Lo, Randy Hsiao-Yu
openaire   +5 more sources

Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes. [PDF]

Micromachines (Basel)
GaN-based terahertz (THz) Schottky barrier diodes (SBDs) are critical components for achieving high-power performance in THz frequency multipliers. However, the space applications of GaN-based THz SBDs are significantly constrained due to insufficient ...
Ren Y, Yu Y, Zhou S, Pang C, Li Y, Lei Z, Zhang H, Feng Z, Song X, Liu H, Lou Y, Ni Y.   +11 more
europepmc   +2 more sources

Modeling TPU Thermal Maps Under Superlattice Thermoelectric Cooling

IEEE Access, 2022
The recent renaissance in machine learning is requesting computing power at an ever-increasing rate. In order to meet this demand, tensor processing units (TPU) are becoming popular because they hold the promise to be more efficient in terms of power ...
Tim Bucher, Hussam Amrouch
doaj   +1 more source

Cryogenic In-Memory Computing for Quantum Processors Using Commercial 5-nm FinFETs

IEEE Open Journal of Circuits and Systems, 2023
Cryogenic CMOS circuits that efficiently connect the classical domain with the quantum world are the cornerstone in bringing large-scale quantum processors to reality. The major challenges are, however, the tight power budget (in the order of milliwatts)
Shivendra Singh Parihar, Simon Thomann, Girish Pahwa, Yogesh Singh Chauhan, Hussam Amrouch   +4 more
doaj   +1 more source

Modeling and Investigating Total Ionizing Dose Impact on FeFET

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023
This article presents a novel, simulation-based study of the long-term impact of X-ray irradiation on the ferroelectric field effect transistor (FeFET).
Munazza Sayed, Kai Ni, Hussam Amrouch
doaj   +1 more source

Peanut Defect Identification Based on Multispectral Image and Deep Learning

Agronomy, 2023
To achieve the non-destructive detection of peanut defects, a multi-target identification method based on the multispectral system and improved Faster RCNN is proposed in this paper.
Yang Wang, Zhao Ding, Jiayong Song, Zhizhu Ge, Ziqing Deng, Zijie Liu, Jihong Wang, Lifeng Bian, Chen Yang   +8 more
doaj   +1 more source

Cryogenic Embedded System to Support Quantum Computing: From 5-nm FinFET to Full Processor

IEEE Transactions on Quantum Engineering, 2023
Quantum computing can enable novel algorithms infeasible for classical computers. For example, new material synthesis and drug optimization could benefit if quantum computers offered more quantum bits (qubits).
Paul R. Genssler, Florian Klemme, Shivendra Singh Parihar, Sebastian Brandhofer, Girish Pahwa, Ilia Polian, Yogesh Singh Chauhan, Hussam Amrouch   +7 more
doaj   +1 more source

Nontraditional Design of Dynamic Logics Using FDSOI for Ultra-Efficient Computing

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023
In this article, we propose a nontraditional design of dynamic logic circuits using fully-depleted silicon-on-insulator (FDSOI) FETs. FDSOI FET allows the threshold voltage ( $V_{\text {t}}$ ) to be adjustable (i.e., low- $V_{\text {t}}$ and high- $V_ ...
Shubham Kumar, Swetaki Chatterjee, Chetan Kumar Dabhi, Yogesh Singh Chauhan, Hussam Amrouch   +4 more
doaj   +1 more source

Printed temperature sensor array for high-resolution thermal mapping

Scientific Reports, 2022
Fully-printed temperature sensor arrays—based on a flexible substrate and featuring a high spatial-temperature resolution—are immensely advantageous across a host of disciplines.
Tim Bücher, Robert Huber, Carsten Eschenbaum, Adrian Mertens, Uli Lemmer, Hussam Amrouch   +5 more
doaj   +1 more source

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Micromachines, 2023
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao   +10 more
doaj   +1 more source