Results 101 to 110 of about 2,332,362 (329)

Three‐Dimensional Hierarchical Nanowire‐Networks with Deep‐Focus Tolerance and Adhesion Robustness for Harsh‐Environment SERS Sensing

Advanced Functional Materials, EarlyView.
A 3D nanowire‐network SERS substrate with robust adhesion is developed, featuring pronounced z‐direction optical activity, ultralow detection limit (1.5 × 10−13 M), and excellent signal uniformity (RSD < 10%). Enabled by enhanced light scattering, increased optical density of states, and structural reinforcement, the substrate demonstrates stable, high‐
Jinglai Duan, Wentao Wang, Xiu Liang, Yongliang Zhang, Jie Liu, Yu Bai, Dangyuan Lei   +6 more
wiley   +1 more source

Fabrication of Bifacial-Modified Perovskites for Efficient Semitransparent Solar Cells with High Average Visible Transmittance

Molecules
Semitransparent perovskite solar cells (PSCs) that possess a high-power conversion efficiency (PCE) and high average visible light transmittance (AVT) can be employed in applications such as photovoltaic windows.
Dazheng Chen, Wenjing Shi, Yan Gao, Sai Wang, Baichuan Tian, Zhizhe Wang, Weidong Zhu, Long Zhou, He Xi, Hang Dong, Wenming Chai, Chunfu Zhang, Jincheng Zhang, Yue Hao   +13 more
doaj   +1 more source

Improvement in Thermomechanical Reliability of Power Conversion Modules Using SiC Power Semiconductors: A Comparison of SiC and Si via FEM Simulation [PDF]

, 2018
Cheolgyu Kim, Chulmin Oh, Yun-Hwa Choi, Kyung-Oun Jang, Taek‐Soo Kim   +4 more
openalex   +1 more source

Near‐Infrared Light‐Programmable Negative Differential Transconductance in Organic Electrochemical Transistors for Reconfigurable Logic

Advanced Functional Materials, EarlyView.
Organic electrochemical transistors based on a Near‐Infrared (NIR)‐responsive polymer p(C4DPP‐T) and iodide electrolyte exhibit optically programmable negative differential transconductance. NIR illumination triggers an iodine‐mediated redox process, enabling a transition from binary to ternary conductance states within a single‐layer device.
Debdatta Panigrahi, Christina J. Kousseff, Aristea Pavlou, Zeinab Hamid, Iain McCulloch, Fabrizio Torricelli, Paul W. M. Blom, Paschalis Gkoupidenis   +7 more
wiley   +1 more source

Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor

Advanced Functional Materials, EarlyView.
Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo, Junsung Byeon, Jungmoon Lim, Sohyeon Park, Sungsan Kang, Byeongchan Kim, Gyuhwi Jeong, Haerim Kim, Bongjun Kim, SeungNam Cha, Sangyeon Pak   +10 more
wiley   +1 more source

Design and Performance of High-Capacity Magnesium–Air Battery for Power Generator System

Energies
Efforts to achieve carbon neutrality, which aims to reduce the net carbon emissions to zero by decreasing carbon emissions from human activities and increasing carbon absorption, are actively underway.
Kwang-Yeop Jang, Sang-Won Seo, Dong-Jin Kim, Dong-Gun Lee   +3 more
doaj   +1 more source

Improved Hybrid Circuit Assembly Yields and Reliability byGlassivation of the Semiconductor Chip [PDF]

, 1977
B. C. Heap, S. A. France
openalex   +1 more source

Covalent Organic Frameworks for Photocatalytic CO2 Reduction: Metal Integration Principles, Strategies and Functions

Advanced Functional Materials, EarlyView.
Covalent organic frameworks (COFs) with metals have been recognized as versatile platforms for photocatalytic CO2 reduction (CO2PRR). Herein, an overview of metal integration strategies for COFs is systematically summarized. Regulatory mechanisms and structure–activity relationships between metal integration and COF‐based CO2PRR are emphasized.
Jie He, Minxian Zhang, Jinqiang Zhang, Hongqi Sun, Shaobin Wang, Xiaoguang Duan   +5 more
wiley   +1 more source

Reliability assessment of high-power GaN-HEMT devices with different buffers under influence of gate bias and high-temperature tests

Applied Physics Express
This study compares Vth-instability in D-mode MIS-HEMT devices between two epitaxial layers, AlN/AlGaN/GaN superlattice-W1, and three-step graded AlGaN-W2.
Shivendra K. Rathaur, Le Trung Hieu, Abhisek Dixit, Edward Yi Chang   +3 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source