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Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends
Energies, 2023 Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion.
Omar Sarwar Chaudhary +3 more
semanticscholar +1 more source
Surface free energy and microarray deposition technology [PDF]
, 2007 Microarray techniques use a combinatorial approach to assess complex biochemical interactions. The fundamental goal is simultaneous, large-scale experimentation analogous to the automation achieved in the semiconductor industry.
Aussillous +8 more
core +1 more source
Package Hermeticity Testing with Thermal Transient Measurements [PDF]
, 2008 The rapid incursion of new technologies such as MEMS and smart sensor device manufacturing requires new tailor-made packaging designs. In many applications these devices are exposed to humid environments.
Rencz, M., Vass-Varnai, Andras
core +2 more sources
Reliability analysis and reliable operation of three-level ANPC inverter
Frontiers in Energy Research, 2023 The three-level active neutral-point-clamped (3L-ANPC) inverters have been widely used in medium-voltage high-power electrical drives. The purpose of this paper is to achieve the reliable operation for 3L-ANPC inverters by reliability analysis and ...
Xiaolin Zheng +4 more
doaj +1 more source
Review of Topside Interconnections for Wide Bandgap Power Semiconductor Packaging
IEEE transactions on power electronics, 2023 Due to their superior material properties, wide bandgap (WBG) semiconductors enable the application of power electronics at higher temperature operation, higher frequencies, and higher efficiencies compared to silicon (Si).
Li‐shuenn Wang +4 more
semanticscholar +1 more source
Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs [PDF]
, 2019 The edge termination design strongly affects the ability of a power device to support the desired voltage and its reliable operation. In this paper we present three appropriate termination designs for 10kV n-IGBTs which achieve the desired blocking ...
, +9 more
core +1 more source
IEEE transactions on power electronics, 2018 Due to the continuous demands for highly reliable and cost-effective power conversion, quantified reliability performances of the power electronics converter are becoming emerging needs.
Ke Ma, U. Choi, F. Blaabjerg
semanticscholar +1 more source
Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2023 This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices followed by a brief ...
S. Mazumder +16 more
semanticscholar +1 more source
Radiation Risks and Mitigation in Electronic Systems [PDF]
, 2016 Electrical and electronic systems can be disturbed by radiation-induced effects. In some cases, radiation-induced effects are of a low probability and can be ignored; however, radiation effects must be considered when designing systems that have a high ...
Todd, B., Uznanski, S.
core +3 more sources
Micromachines, 2023 The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light.
Zhanfei Han +10 more
doaj +1 more source