Results 21 to 30 of about 2,092,774 (331)

Review of Topside Interconnections for Wide Bandgap Power Semiconductor Packaging

IEEE transactions on power electronics, 2023
Due to their superior material properties, wide bandgap (WBG) semiconductors enable the application of power electronics at higher temperature operation, higher frequencies, and higher efficiencies compared to silicon (Si).
Li‐shuenn Wang, Wen Wang, R. Hueting, G. Rietveld, J. Ferreira   +4 more
semanticscholar   +1 more source

Reliability analysis and reliable operation of three-level ANPC inverter

Frontiers in Energy Research, 2023
The three-level active neutral-point-clamped (3L-ANPC) inverters have been widely used in medium-voltage high-power electrical drives. The purpose of this paper is to achieve the reliable operation for 3L-ANPC inverters by reliability analysis and ...
Xiaolin Zheng, Xiaoxiao Huang, Peiyu Chen, Zhiqiang Chong, Zhongchen Yuan   +4 more
doaj   +1 more source

Development of high reliability semiconductor devices by copper wire bonding.

, 1988
J. Hirota, Yoji Shibutani, Toshikazu Sugimura, K. Machida, Takio Okuda   +4 more
openalex   +3 more sources

Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

IEEE Journal of Emerging and Selected Topics in Power Electronics, 2023
This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices followed by a brief ...
S. Mazumder, L. Voss, K. Dowling, A. Conway, David Hall, R. Kaplar, G. Pickrell, J. Flicker, A. Binder, S. Chowdhury, V. Veliadis, Fang Luo, S. Khalil, T. Aichinger, S. Bahl, M. Meneghini, A. Charles   +16 more
semanticscholar   +1 more source

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Micromachines, 2023
The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light.
Zhanfei Han, Xiangdong Li, Hongyue Wang, Jiahui Yuan, Junbo Wang, Meng Wang, Weitao Yang, Shuzhen You, Jingjing Chang, Jincheng Zhang, Yue Hao   +10 more
doaj   +1 more source

Prediction and Validation of Wear-Out Reliability Metrics for Power Semiconductor Devices With Mission Profiles in Motor Drive Application

IEEE transactions on power electronics, 2018
Due to the continuous demands for highly reliable and cost-effective power conversion, quantified reliability performances of the power electronics converter are becoming emerging needs.
Ke Ma, U. Choi, F. Blaabjerg
semanticscholar   +1 more source

Fault Management Techniques to Enhance the Reliability of Power Electronic Converters: An Overview

IEEE Access, 2023
The reliability of power electronic converters is a major concern in industrial applications because of using prone-to-failure elements such as high-power semiconductor devices and electronic capacitors. Hence, designing fault-tolerant inverters has been
Saeed Rahimpour, O. Husev, D. Vinnikov, Naser Vosoughi Kurdkandi, Hadi Tarzamni   +4 more
semanticscholar   +1 more source

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High-Resolution X-Ray Diffraction: Theoretical and Practical Aspects.

Small Methods, 2021
The reliability of semiconductor materials with electrical and optical properties are connected to their structures. The elastic strain field and tilt analysis of the crystal lattice, detectable by the variation in position and shape of the diffraction ...
S. Dolabella, A. Borzì, A. Dommann, A. Neels   +3 more
semanticscholar   +1 more source

WBG-Based PEBB Module for High Reliability Power Converters

IEEE Access, 2021
The increasing presence of power electronic converters in the modern world – from electric vehicles, up to industrial applications – brings up concerns about their reliability, especially in the case of the Wide Band-Gap (WBG) devices ...
Sebastian Baba, Serafin Bachman, Marek Jasinski, Marcin Zelechowski   +3 more
doaj   +1 more source

Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency

Nanoscale Research Letters, 2019
In this work, parametric investigations on structural optimization are systematically made for 4H-SiC-based separated absorption charge and multiplication (SACM) avalanche ultraviolet photodiode (UV APD).
Jianquan Kou, KangKai Tian, Chunshuang Chu, Yonghui Zhang, Xingye Zhou, Zhihong Feng, Zi-Hui Zhang   +6 more
doaj   +1 more source