Results 31 to 40 of about 190,755 (383)
Multi-Threshold Corner Detection and Region Matching Algorithm Based on Texture Classification
IEEE Access, 2019 In order to address the unreasonable distributed corners in single threshold Harris detection and expensive computation cost incurred from image region matching performed by normalized cross correlation (NCC) algorithm, multi-threshold corner detection ...
Zetian Tang +6 more
doaj +1 more source
Radiation Pattern Measurement in the Planar Coordinate
IEEE Photonics Journal, 2019 A planar measurement approach is presented to obtain the radiation pattern, by which rotation operations can be removed or reduced for a source with narrow and divergent viewing angle, respectively.
Chen Yang +5 more
doaj +1 more source
Spin polarized electron beams production beyond III-V semiconductors [PDF]
arXiv, 2022 This paper summarizes the state of the art of photocathode based on III-V semiconductors for spin polarized electron beam production. The limitations preventing this class of material to provide the long term reliability at the highest average beam currents necessary for some of the new accelerator facilities or proposed upgrades of existing ones are ...
arxiv
Co-planar spin-polarized light emitting diode [PDF]
Appl. Phys. Lett. 88, 091106 (2006), 2005 Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor heterostructures has been used for a reliable spin detection.
arxiv +1 more source
Design of Ellipsoid and Spherical Combined Light Source for Uniform Flux and Color Mixing
IEEE Photonics Journal, 2019 In this letter, an ellipsoid-spherical combined light source structure is presented for the purpose of uniform flux and color mixing, when considering heat dissipation.
Rui-Min Zeng +8 more
doaj +1 more source
Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor / topological insulator heterostructure [PDF]
arXiv, 2021 Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin
arxiv
Nanoscale Research Letters, 2020 In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated.
Yachao Zhang +9 more
doaj +1 more source
Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure [PDF]
APL 81, 265 (2002), 2001 We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization.
arxiv +1 more source
Materials Research Express, 2020 The magnetic and optical properties studies in monolayer transition-metal dichalcogenides have attracted attention because of the manufacture spintronic, electronic and photonic devices.
Qi-Zhi Lang +6 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 In this study, in-situ MOCVD-grown SiN/AlN/Al0.05Ga0.95N HEMTs were fabricated using ALD-Al2O3/PECVD-SiO2 passivation. A high on/off current ratio of 109 and a low subthreshold swing of 64 mV/dec are achieved. The interface traps in the SiN/AlN/Al0.05Ga0.
Weihang Zhang +6 more
doaj +1 more source