Results 31 to 40 of about 190,755 (383)

Multi-Threshold Corner Detection and Region Matching Algorithm Based on Texture Classification

open access: yesIEEE Access, 2019
In order to address the unreasonable distributed corners in single threshold Harris detection and expensive computation cost incurred from image region matching performed by normalized cross correlation (NCC) algorithm, multi-threshold corner detection ...
Zetian Tang   +6 more
doaj   +1 more source

Radiation Pattern Measurement in the Planar Coordinate

open access: yesIEEE Photonics Journal, 2019
A planar measurement approach is presented to obtain the radiation pattern, by which rotation operations can be removed or reduced for a source with narrow and divergent viewing angle, respectively.
Chen Yang   +5 more
doaj   +1 more source

Spin polarized electron beams production beyond III-V semiconductors [PDF]

open access: yesarXiv, 2022
This paper summarizes the state of the art of photocathode based on III-V semiconductors for spin polarized electron beam production. The limitations preventing this class of material to provide the long term reliability at the highest average beam currents necessary for some of the new accelerator facilities or proposed upgrades of existing ones are ...
arxiv  

Co-planar spin-polarized light emitting diode [PDF]

open access: yesAppl. Phys. Lett. 88, 091106 (2006), 2005
Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor heterostructures has been used for a reliable spin detection.
arxiv   +1 more source

Design of Ellipsoid and Spherical Combined Light Source for Uniform Flux and Color Mixing

open access: yesIEEE Photonics Journal, 2019
In this letter, an ellipsoid-spherical combined light source structure is presented for the purpose of uniform flux and color mixing, when considering heat dissipation.
Rui-Min Zeng   +8 more
doaj   +1 more source

Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor / topological insulator heterostructure [PDF]

open access: yesarXiv, 2021
Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin
arxiv  

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

open access: yesNanoscale Research Letters, 2020
In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated.
Yachao Zhang   +9 more
doaj   +1 more source

Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure [PDF]

open access: yesAPL 81, 265 (2002), 2001
We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization.
arxiv   +1 more source

The magnetic, optical and electronic properties of Mn–X(X = O, Se, Te, Po) co-doped MoS2 monolayers via first principle calculation

open access: yesMaterials Research Express, 2020
The magnetic and optical properties studies in monolayer transition-metal dichalcogenides have attracted attention because of the manufacture spintronic, electronic and photonic devices.
Qi-Zhi Lang   +6 more
doaj   +1 more source

In-situ-SiN/AlN/Al0.05Ga0.95N High Electron-Mobility Transistors on Si-Substrate Using Al2O3/SiO2 Passivation

open access: yesIEEE Journal of the Electron Devices Society, 2021
In this study, in-situ MOCVD-grown SiN/AlN/Al0.05Ga0.95N HEMTs were fabricated using ALD-Al2O3/PECVD-SiO2 passivation. A high on/off current ratio of 109 and a low subthreshold swing of 64 mV/dec are achieved. The interface traps in the SiN/AlN/Al0.05Ga0.
Weihang Zhang   +6 more
doaj   +1 more source

Home - About - Disclaimer - Privacy