Results 31 to 40 of about 180,788 (231)
Design of Ellipsoid and Spherical Combined Light Source for Uniform Flux and Color Mixing
IEEE Photonics Journal, 2019 In this letter, an ellipsoid-spherical combined light source structure is presented for the purpose of uniform flux and color mixing, when considering heat dissipation.
Rui-Min Zeng +8 more
doaj +1 more source
Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor / topological insulator heterostructure [PDF]
arXiv, 2021 Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin
arxiv
Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs [PDF]
, 2019 The edge termination design strongly affects the ability of a power device to support the desired voltage and its reliable operation. In this paper we present three appropriate termination designs for 10kV n-IGBTs which achieve the desired blocking ...
, +9 more
core +1 more source
Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure [PDF]
APL 81, 265 (2002), 2001 We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization.
arxiv +1 more source
Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field-Effect Transistors [PDF]
, 2006 No ...
Baude +20 more
core +3 more sources
Nanoscale Research Letters, 2020 In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated.
Yachao Zhang +9 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 In this study, in-situ MOCVD-grown SiN/AlN/Al0.05Ga0.95N HEMTs were fabricated using ALD-Al2O3/PECVD-SiO2 passivation. A high on/off current ratio of 109 and a low subthreshold swing of 64 mV/dec are achieved. The interface traps in the SiN/AlN/Al0.05Ga0.
Weihang Zhang +6 more
doaj +1 more source
Gain in quantum cascade lasers and superlattices: A quantum transport theory [PDF]
Physical Review B 66, 085326 (2002), 2002 Gain in current-driven semiconductor heterostructure devices is calculated within the theory of nonequilibrium Green functions. In order to treat the nonequilibrium distribution self-consistently the full two-time structure of the theory is employed without relying on any sort of Kadanoff-Baym Ansatz.
arxiv +1 more source
Radiation Risks and Mitigation in Electronic Systems [PDF]
, 2016 Electrical and electronic systems can be disturbed by radiation-induced effects. In some cases, radiation-induced effects are of a low probability and can be ignored; however, radiation effects must be considered when designing systems that have a high ...
Todd, B., Uznanski, S.
core +3 more sources
Materials Research Express, 2020 The magnetic and optical properties studies in monolayer transition-metal dichalcogenides have attracted attention because of the manufacture spintronic, electronic and photonic devices.
Qi-Zhi Lang +6 more
doaj +1 more source