Results 31 to 40 of about 99,199 (301)

Developing the knowledge-based human resources that support the implementation of the National Dual Training System (NDTS): evaluation of TVET teacher's competency at MARA Training Institutions [PDF]

, 2015
Development in the world of technical and vocational education and training (TVET) on an ongoing basis is a challenge to the profession of the TVET-teachers to maintain their performance.
Ali, Mahazani
core   +1 more source

The magnetic, optical and electronic properties of Mn–X(X = O, Se, Te, Po) co-doped MoS2 monolayers via first principle calculation

Materials Research Express, 2020
The magnetic and optical properties studies in monolayer transition-metal dichalcogenides have attracted attention because of the manufacture spintronic, electronic and photonic devices.
Qi-Zhi Lang, Yan-Bin Huang, Jie-Min Wei, Yi Wang, Xiang Guo, Zi-Jiang Luo, Zhao Ding   +6 more
doaj   +1 more source

In-situ-SiN/AlN/Al_0.05Ga_0.95N High Electron-Mobility Transistors on Si-Substrate Using Al₂O₃/SiO₂ Passivation

IEEE Journal of the Electron Devices Society, 2021
In this study, in-situ MOCVD-grown SiN/AlN/Al0.05Ga0.95N HEMTs were fabricated using ALD-Al2O3/PECVD-SiO2 passivation. A high on/off current ratio of 109 and a low subthreshold swing of 64 mV/dec are achieved. The interface traps in the SiN/AlN/Al0.05Ga0.
Weihang Zhang, Liyu Fu, Xi Liu, Jincheng Zhang, Shenglei Zhao, Zhizhe Wang, Yue Hao   +6 more
doaj   +1 more source

Beyond Order: Perspectives on Leveraging Machine Learning for Disordered Materials

Advanced Engineering Materials, EarlyView.
This article explores how machine learning (ML) revolutionizes the study and design of disordered materials by uncovering hidden patterns, predicting properties, and optimizing multiscale structures. It highlights key advancements, including generative models, graph neural networks, and hybrid ML‐physics methods, addressing challenges like data ...
Hamidreza Yazdani Sarvestani, Surabhi Nadigotti, Erfan Fatehi, Derek Aranguren van Egmond, Behnam Ashrafi   +4 more
wiley   +1 more source

Design and development of a fast scan infrared detection and measurement instrument [PDF]

, 1971
Infrared microscope instrument measures and plots the infrared profile of semiconductor chips, transistors and integrated circuits. Infrared analyses yields information on electrical and physical properties, enabling manufacturing improvements in ...
Dostoomian, A. S., Hamiter, L., Nowakowski, M., Vanzetti, R.   +3 more
core   +1 more source

Fabrication of photonic band-gap crystals [PDF]

, 1995
We describe the fabrication of three-dimensional photonic crystals using a reproducible and reliable procedure consisting of electron beam lithography followed by a sequence of dry etching steps.
Cheng, C. C., Scherer, A.
core   +1 more source

Cryogenic Hyperdimensional In-Memory Computing Using Ferroelectric TCAM

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Cryogenic operations of electronics present a significant step forward to achieve huge demand of in-memory computing (IMC) for high-performance computing, quantum computing, and military applications.
Shivendra Singh Parihar, Shubham Kumar, Swetaki Chatterjee, Girish Pahwa, Yogesh Singh Chauhan, Hussam Amrouch   +5 more
doaj   +1 more source

Femtosecond Single‐ and Double‐Pulse Fabrication of Periodic Nanostructures on Stainless Steel for Surface‐Enhanced Raman Spectroscopy

Advanced Engineering Materials, EarlyView.
Periodic submicron features are fabricated on 304 stainless steel using single and double femtosecond laser pulses. By adjusting polarization, fluence, and inter‐pulse delay, 1D and 2D nanostructures are formed. Enhanced hydrophobicity and dense surface‐enhanced Raman spectroscopy hotspots enable analyte detection down to 10−10 M with good ...
Balaji Baskar, Atiqul Islam Ahad, Carla Berrospe‐Rodriguez, Guillermo Aguilar   +3 more
wiley   +1 more source

Development of reliability prediction technique for semiconductor diodes [PDF]

, 1967
New fundamental technique of reliability prediction for semiconductor diodes based on realistic mathematical models can be applied to component failure rate prediction including mechanical degradation, electrical degradation, environmental stress factors,
Ryerson, C. M.
core   +1 more source

Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer

Micromachines
To enhance the DC and RF performance of AlGaN/GaN HEMTs, a novel device structure was proposed and investigated through simulation. The key innovation of this new structure lies in the incorporation of an Al0.7In0.15Ga0.15N back-barrier layer and an N ...
Shuxiang Sun, Lulu Liu, Gangchuan Qu, Xintong Xie, J. Ajayan   +4 more
doaj   +1 more source