Results 51 to 60 of about 120,829 (333)

In-situ-SiN/AlN/Al_0.05Ga_0.95N High Electron-Mobility Transistors on Si-Substrate Using Al₂O₃/SiO₂ Passivation

IEEE Journal of the Electron Devices Society, 2021
In this study, in-situ MOCVD-grown SiN/AlN/Al0.05Ga0.95N HEMTs were fabricated using ALD-Al2O3/PECVD-SiO2 passivation. A high on/off current ratio of 109 and a low subthreshold swing of 64 mV/dec are achieved. The interface traps in the SiN/AlN/Al0.05Ga0.
Weihang Zhang, Liyu Fu, Xi Liu, Jincheng Zhang, Shenglei Zhao, Zhizhe Wang, Yue Hao   +6 more
doaj   +1 more source

Organic Electrochemical Transistor Channel Materials: Copolymerization Versus Physical Mixing of Glycolated and Alkoxylated Polymers

Advanced Functional Materials, EarlyView.
This work discusses the use of blended channel materials in OECTs. It explores how mixing glycolated and alkoxylated polymers in various ratios offers a simpler and more efficient route to tuning OECT properties. The performance of the polymer blends is compared to the corresponding copolymers, demonstrating similar OECT characteristics, swelling ...
Lize Bynens, Kaishuai Zhang, Priscila Cavassin, Arwin Goossens, Jochen Vanderspikken, Tania C. H. Castillo, Demetra Tsokkou, Adam Marks, Arianna Magni, Karrie Weaver, Laurence Lutsen, Sahika Inal, Koen Vandewal, Natalie Banerji, Wouter Maes   +14 more
wiley   +1 more source

Unbalanced currents effect on the thermal characteristic and reliability of parallel connected power switches

Case Studies in Thermal Engineering, 2021
In many industrial applications, parallel connection of power semiconductor switches is widely used to achieve higher power levels and fault-tolerant operation.
Tohid Rahimi, Lei Ding, Armin Abadifard, Pedram Ghavidel, Masoud Farhadi, Rasoul Faraji   +5 more
doaj   +1 more source

Advancing Electronic Application of Coordination Solids: Enhancing Electron Transport and Device Integration via Surface‐Mounted MOFs (SURMOFs)

Advanced Functional Materials, EarlyView.
The layer‐by‐layer (LbL) assembly of coordination solids, enabled by the surface‐mounted metal‐organic framework (SURMOF) platform, is on the cusp of generating the organic counterpart of the epitaxy of inorganics. The programmable and sequential SURMOF protocol, optimized by machine learning (ML), is suited for accessing high‐quality thin films of ...
Zhengtao Xu, Christof Wöll, Stefan Bräse   +2 more
wiley   +1 more source

Synchrotron Radiation for Quantum Technology

Advanced Functional Materials, EarlyView.
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader, Sakura Pascarelli, Klaus Attenkofer, Anna A. Makarova, Karsten Holldack, Kai Rossnagel, Kristiaan Temst, George Kourousias, Stefano Carretta, Caterina Biscari, Helmut Dosch   +10 more
wiley   +1 more source

Gate protective device for insulated gate field-effect transistors [PDF]

, 1972
Device, which protects insulated gate field-effect transistors, improves reliability through utilization of layers of conductive material on top of each alternating semiconductor material region.
Sunshine, R. A.
core   +1 more source

Analysis of Chromatic Aberration Effects in Triple-Junction Solar Cells Using Advanced Distributed Models [PDF]

, 2011
The consideration of real operating conditions for the design and optimization of a multijunction solar cell receiver-concentrator assembly is indispensable.
Algora del Valle, Carlos, Espinet González, Pilar, García Vara, Iván, Rey-Stolle Prado, Ignacio   +3 more
core   +2 more sources

Atomic Size Misfit for Electrocatalytic Small Molecule Activation

Advanced Functional Materials, EarlyView.
This review explores the application and mechanisms of atomic size misfit in catalysis for small molecule activation, focusing on how structural defects and electronic properties can effectively lower the energy barriers of chemical bonds in molecules like H2O, CO2, and N2.
Ping Hong, Changfan Xu, Huaping Zhao, Yong Lei   +3 more
wiley   +1 more source

Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes

Micromachines
GaN-based terahertz (THz) Schottky barrier diodes (SBDs) are critical components for achieving high-power performance in THz frequency multipliers. However, the space applications of GaN-based THz SBDs are significantly constrained due to insufficient ...
Yan Ren, Yongtao Yu, Shengze Zhou, Chao Pang, Yinle Li, Zhifeng Lei, Hong Zhang, Zhihong Feng, Xubo Song, Honghui Liu, Yongli Lou, Yiqiang Ni   +11 more
doaj   +1 more source

High-Performance Deep SubMicron CMOS Technologies with Polycrystalline-SiGe Gates [PDF]

, 2000
The use of polycrystalline SiGe as the gate material for deep submicron CMOS has been investigated. A complete compatibility to standard CMOS processing is demonstrated when polycrystalline Si is substituted with SiGe (for Ge fractions below 0.5) to form
Ponomarev, Youri V., Salm, Cora, Schmitz, Jurriaan, Stolk, Peter A., Woerlee, Pierre H.   +4 more
core   +4 more sources