Results 51 to 60 of about 93,152 (339)

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

open access: yesAdvanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo   +16 more
wiley   +1 more source

Adaptative machine vision with microsecond-level accurate perception beyond human retina

open access: yesNature Communications
Visual adaptive devices have potential to simplify circuits and algorithms in machine vision systems to adapt and perceive images with varying brightness levels, which is however limited by sluggish adaptation process.
Ling Li   +15 more
doaj   +1 more source

High Purity Germanium Based Radiation Detectors with Segmented Amorphous Semiconductor Electrical Contacts: Fabrication Procedures [PDF]

open access: yesarXiv, 2020
Radiation detectors constructed from large volume high purity Ge (HPGe) single crystals are widely used for gamma-ray spectroscopy. The detectors for this application can be simple in that they need only have two electrical contacts for voltage application and signal readout.
arxiv  

Band offsets of semiconductor heterostructures: a hybrid density functional study [PDF]

open access: yes, 2010
We demonstrate the accuracy of the hybrid functional HSE06 for computing band offsets of semiconductor alloy heterostructures. The highlight of this study is the computation of conduction band offsets with a reliability that has eluded standard density functional theory.
arxiv   +1 more source

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao   +17 more
wiley   +1 more source

A new generation of high-power semiconductor devices [PDF]

open access: yesTehnika, 2014
Due to the constant development of technology and production, silicon semiconductor electronic components reach performance approaching the theoretical characteristics of the material.
Drndarević Vujo R.
doaj   +1 more source

Selective Reduction Laser Sintering: A New Strategy for NO2 Gas Detection Based on In2O3 Nanoparticles

open access: yesAdvanced Functional Materials, EarlyView.
This research utilizes selective reduction laser sintering (SRLS) to engineer In2O3 NPs for flexible NO2 sensors. The introduction of oxygen vacancy defects enhances sensor performance, offering excellent responsiveness, rapid response/recovery, superior selectivity, low detection limit, and long‐term stability.
Shaogang Wang   +8 more
wiley   +1 more source

Simple model for efficient search of high-mobility organic semiconductors [PDF]

open access: yesarXiv, 2019
High charge mobility in active layers of organic electronic devices is often necessary for their efficient operation. As a result, search for high-mobility materials among the plethora of synthesizable organic semiconductors is of paramount importance for organic electronics.
arxiv  

Harnessing Outer Space for Improved Electrocaloric Cooling

open access: yesAdvanced Functional Materials, EarlyView.
A novel radiative heat sink/source‐integrated electrocaloric (R‐iEC) system combines the electrocaloric (EC) effect with a thermally conductive radiative cooler (TCRC) to address heat dissipation limitations in EC devices. Utilizing outer space as a heat sink, the system achieves up to 240 W m−2 of heat dissipation performance, making it highly ...
Dong Hyun Seo   +8 more
wiley   +1 more source

Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate

open access: yesMicromachines
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate.
Zhanfei Han   +9 more
doaj   +1 more source

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