Results 51 to 60 of about 119,011 (331)

Advancing Electronic Application of Coordination Solids: Enhancing Electron Transport and Device Integration via Surface‐Mounted MOFs (SURMOFs)

open access: yesAdvanced Functional Materials, EarlyView.
The layer‐by‐layer (LbL) assembly of coordination solids, enabled by the surface‐mounted metal‐organic framework (SURMOF) platform, is on the cusp of generating the organic counterpart of the epitaxy of inorganics. The programmable and sequential SURMOF protocol, optimized by machine learning (ML), is suited for accessing high‐quality thin films of ...
Zhengtao Xu   +2 more
wiley   +1 more source

Gate protective device for insulated gate field-effect transistors [PDF]

open access: yes, 1972
Device, which protects insulated gate field-effect transistors, improves reliability through utilization of layers of conductive material on top of each alternating semiconductor material region.
Sunshine, R. A.
core   +1 more source

Superconducting proximity effect in epitaxial Al-InAs heterostructures

open access: yes, 2019
Semiconductor-based Josephson junctions provide a platform for studying proximity effect due to the possibility of tuning junction properties by gate voltage and large-scale fabrication of complex Josephson circuits.
Dartiailh, Matthieu C.   +5 more
core   +1 more source

Synchrotron Radiation for Quantum Technology

open access: yesAdvanced Functional Materials, EarlyView.
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader   +10 more
wiley   +1 more source

Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes

open access: yesMicromachines
GaN-based terahertz (THz) Schottky barrier diodes (SBDs) are critical components for achieving high-power performance in THz frequency multipliers. However, the space applications of GaN-based THz SBDs are significantly constrained due to insufficient ...
Yan Ren   +11 more
doaj   +1 more source

Atomic Size Misfit for Electrocatalytic Small Molecule Activation

open access: yesAdvanced Functional Materials, EarlyView.
This review explores the application and mechanisms of atomic size misfit in catalysis for small molecule activation, focusing on how structural defects and electronic properties can effectively lower the energy barriers of chemical bonds in molecules like H2O, CO2, and N2.
Ping Hong   +3 more
wiley   +1 more source

Reliability of Wide Band Gap Power Electronic Semiconductor and Packaging: A Review

open access: yesEnergies, 2022
Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in various fields and occupied
Yalin Wang, Yi Ding, Yi Yin
doaj   +1 more source

Active power losses distribution methods for the modular multilevel converter [PDF]

open access: yes, 2016
Modular Converters such as the MMC have become the new standard in VSC-HVDC applications. Their modularity has brought many industrial advantages but also increased the complexity of their operation.
Merlin, MMC, Mitcheson, PD
core   +1 more source

Copper‐based Materials for Photo and Electrocatalytic Process: Advancing Renewable Energy and Environmental Applications

open access: yesAdvanced Functional Materials, EarlyView.
Cu‐based catalysts as a cornerstone in advancing sustainable energy technologies are fully reviewed in this manuscript, highlighting their potential in photo‐ and electrocatalysis. It includes metallic copper, copper oxides, copper sulfides, copper halide perovskites, copper‐based metal–organic frameworks (MOFs), and covalent organic frameworks (COFs),
Jéssica C. de Almeida   +16 more
wiley   +1 more source

First-principles study on the electronic structure and catalytic properties of two-dimensional MX2N4 systems (M = Ti, Zr; X = Si, Ge)

open access: yesResults in Physics, 2023
Recently, the two-dimensional MA2Z4 family with a seven-atom layer structure (experimentally synthesized a MoSi2N4 monolayer), which has good stability and exhibits semiconductivity, providing a platform for photocatalytic hydrolysis studies of two ...
Yi Wang   +7 more
doaj   +1 more source

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