Results 61 to 70 of about 120,829 (333)

Copper‐based Materials for Photo and Electrocatalytic Process: Advancing Renewable Energy and Environmental Applications

open access: yesAdvanced Functional Materials, EarlyView.
Cu‐based catalysts as a cornerstone in advancing sustainable energy technologies are fully reviewed in this manuscript, highlighting their potential in photo‐ and electrocatalysis. It includes metallic copper, copper oxides, copper sulfides, copper halide perovskites, copper‐based metal–organic frameworks (MOFs), and covalent organic frameworks (COFs),
Jéssica C. de Almeida   +16 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

First-principles study on the electronic structure and catalytic properties of two-dimensional MX2N4 systems (M = Ti, Zr; X = Si, Ge)

open access: yesResults in Physics, 2023
Recently, the two-dimensional MA2Z4 family with a seven-atom layer structure (experimentally synthesized a MoSi2N4 monolayer), which has good stability and exhibits semiconductivity, providing a platform for photocatalytic hydrolysis studies of two ...
Yi Wang   +7 more
doaj   +1 more source

Semiclassical theory of shot noise in ballistic n+-i-n+ semiconductor strucutres: relevance of Pauli and long range Coulomb correlations [PDF]

open access: yes, 2002
We work out a semiclassical theory of shot noise in ballistic n+-i-n+ semiconductor structures aiming at studying two fundamental physical correlations coming from Pauli exclusion principle and long range Coulomb interaction.
A. Greiner   +36 more
core   +3 more sources

2D Multifunctional Spin‐Orbit Coupled Dirac Nodal Line Materials

open access: yesAdvanced Functional Materials, EarlyView.
A total of 473 nonmagnetic and antiferromagnetic 2D spin‐orbit coupled Dirac nodal line materials are screened, spanning 5 layer groups and 12 magnetic space groups. Furthermore, it integrates their topological properties with electride, multiferroic, and magnetic characteristics, revealing unique systems with expanded functionalities and promising ...
Weizhen Meng   +7 more
wiley   +1 more source

Adaptative machine vision with microsecond-level accurate perception beyond human retina

open access: yesNature Communications
Visual adaptive devices have potential to simplify circuits and algorithms in machine vision systems to adapt and perceive images with varying brightness levels, which is however limited by sluggish adaptation process.
Ling Li   +15 more
doaj   +1 more source

Climate Change Reporting: A Resource Based Perspective [PDF]

open access: yes, 2011
Kajian ini dilakukan untuk mengkaji tahap serta faktor yang mengalakkan laporan pemanasan global di antara syarikat-syarikat yang tersenarai di Bursa Malaysia.
Shaikh Salim, Siti Zulaikha
core  

Superconducting proximity effect in epitaxial Al-InAs heterostructures

open access: yes, 2019
Semiconductor-based Josephson junctions provide a platform for studying proximity effect due to the possibility of tuning junction properties by gate voltage and large-scale fabrication of complex Josephson circuits.
Dartiailh, Matthieu C.   +5 more
core   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

open access: yesAdvanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp   +7 more
wiley   +1 more source

Multilevel metallization method for fabricating a metal oxide semiconductor device [PDF]

open access: yes, 1978
An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and
Bouldin, D. L.   +3 more
core   +1 more source

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