Results 61 to 70 of about 180,788 (231)
Adaptative machine vision with microsecond-level accurate perception beyond human retina
Visual adaptive devices have potential to simplify circuits and algorithms in machine vision systems to adapt and perceive images with varying brightness levels, which is however limited by sluggish adaptation process.
Ling Li+15 more
doaj +1 more source
High Purity Germanium Based Radiation Detectors with Segmented Amorphous Semiconductor Electrical Contacts: Fabrication Procedures [PDF]
Radiation detectors constructed from large volume high purity Ge (HPGe) single crystals are widely used for gamma-ray spectroscopy. The detectors for this application can be simple in that they need only have two electrical contacts for voltage application and signal readout.
arxiv
Band offsets of semiconductor heterostructures: a hybrid density functional study [PDF]
We demonstrate the accuracy of the hybrid functional HSE06 for computing band offsets of semiconductor alloy heterostructures. The highlight of this study is the computation of conduction band offsets with a reliability that has eluded standard density functional theory.
arxiv +1 more source
A new generation of high-power semiconductor devices [PDF]
Due to the constant development of technology and production, silicon semiconductor electronic components reach performance approaching the theoretical characteristics of the material.
Drndarević Vujo R.
doaj +1 more source
Gate stability of GaN-Based HEMTs with P-Type Gate [PDF]
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Decoutere, S.+10 more
core +2 more sources
Simple model for efficient search of high-mobility organic semiconductors [PDF]
High charge mobility in active layers of organic electronic devices is often necessary for their efficient operation. As a result, search for high-mobility materials among the plethora of synthesizable organic semiconductors is of paramount importance for organic electronics.
arxiv
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate.
Zhanfei Han+9 more
doaj +1 more source
Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations [PDF]
This paper investigates the validity of the parabolic effective mass approximation (EMA), which is almost universally used to describe the size and bias-induced quantization in n-MOSFETs.
Esseni, David+4 more
core +3 more sources
In this paper, the degradation mechanism of the RF performance of 22 nm fully depleted (FD) silicon-on-insulator nMOSFETs at different total ionizing dose levels has been investigated.
Zhanpeng Yan+7 more
doaj +1 more source
Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring
GaAs Quantum Ring (QR) was gained on GaAs (001) by Droplet Epitaxy (DE), and the microscopic morphology of the GaAs samples was observed by Scanning Tunnel Microscope (STM).
Qi-Zhi Lang+3 more
doaj +1 more source