Results 251 to 260 of about 142,166 (304)

Piezoelectric-Based Vibration Energy-Harvesting for Bladed Disks: Modeling and Comparative Performance Analysis of Interface Circuits. [PDF]

Sensors (Basel)
Zhang F, Wang L, Ding T.
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Effectiveness and Safety Profile of BIC/TAF/FTC in People living with HIV Switched from Other Antiretroviral Regimens: A Real-Life Retrospective Cohort Analysis. [PDF]

Infez Med
Pipitone G, Marrali D, Goad M, Giordano M, Abbott M, Gizzi A, Sanfilippo A, Marascia FG, Agrenzano S, Imburgia C, Cascio A, Iaria C.   +11 more
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A complementary resistive switching neuron

Nanotechnology, 2022
Abstract The complementary resistive switching (CRS) memristor has originally been proposed for use as the storage element or artificial synapse in large-scale crossbar array with the capability of solving the sneak path problem, but its usage has mainly been hampered by the inherent destructiveness of the read ...
Xinxin Wang, Huanglong Li
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Resistance switching for RRAM applications

Science China Information Sciences, 2011
Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (automotive, embedded, storage, RAM).
Frederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen, Yenya Hsu, Lijie Zhang, Pang-Shiu Chen, Weisu Chen, Peiyi Gu, Wenhsing Liu, Sumin Wang, Chen-Han Tsai, Shyh-Shyuan Sheu, Ming-Jinn Tsai, Ru Huang 0001   +13 more
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Complementary Resistive Switch Sensing

2018 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2018
This document introduces a circuit model for sensing using memristive complementary resistive switch (CRS). Sensing using memristors has been recently introduced for its potential for high density integrations. The CRS element allows to reduce sneak currents as shown in previous literature.
Danilo Pellegrini, Marco Ottavi, Eugenio Martinelli, Corrado Di Natale   +3 more
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Switching Characteristics of Antiparallel Resistive Switches

IEEE Electron Device Letters, 2012
Antiparallel resistive switches exhibit - characteristics of various types, depending on the properties of individual switches and applied compliance-current levels. When one switch is on and the other is off, an application of voltage of opposite polarity may lead to the following: 1) rupture of the first switch followed by a bridge formation in the ...
Tong Liu, Yuhong Kang, Mohini Verma, Marius K. Orlowski   +3 more
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Switching ON resistance

Science, 2019
Antibiotic Resistance Clonal bacterial colonies will often grow dissimilar patches, similar to a tortoiseshell pattern. These differing phenotypes arise by reversible mechanisms called phase variation. Jiang et al. developed an algorithm to survey bacterial genomes for invertible promoters that cause phase variation.
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Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells

IEEE Transactions on Device and Materials Reliability, 2013
This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104.
Hee-Dong Kim, Ho-Myoung An, Yun Mo Sung, Hyunsik Im, Tae Geun Kim   +4 more
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