Results 261 to 270 of about 142,166 (304)
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Switching control of resistive switching devices

Applied Physics Letters, 2010
Switching current control plays a critical role in the operation of resistive switching devices. Both on-state resistance and maximum reset current show strong dependence on the current limit during set switching. The dependence in unipolar switching devices can be explained by the power-driven nature of reset and dynamic competition between set and ...
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Resistance of a water switch

The 33rd IEEE International Conference on Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts., 2006
Summary form only given. This paper re-examines the assumptions used in the Braginskii arc expansion model when it is applied, as by Martin, to water breakdown channels. In particular the electrical conductivity of water in the channel is allowed to vary with temperature and a more realistic radiation estimate is adopted.
L.K. Warne, J.M. Lehr, R.E. Jorgensen
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On the Influence of Switch Resistances on Switched-Capacitor Converter Losses

IEEE Transactions on Industrial Electronics, 2012
The contribution of switch resistances to the losses in switched-capacitor converters (SCC) is reevaluated. The results reaffirm the crucial role that the switch resistances play in the design of open-loop and regulated SCC.
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Influence of resistance on switching transients

Electrical Engineering, 1939
An inspection of switching transients shows that the resistances of the circuits play an important part in limiting the amplitudes and the durations. Although only a few typical circuits have been analyzed, the general damping effect of resistance has been shown.
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Optimal switch resistances in Switched Capacitor Converters

2010 IEEE 26-th Convention of Electrical and Electronics Engineers in Israel, 2010
Switched Capacitor Converters (SCC) losses are analyzed and the rules for the selection of SCC parameters (such as switch resistances, capacitors values and switching frequency) to meet specific efficiency requirements, are developed. This is done by first applying an advanced methodology for calculating the equivalent resistance (R e ) of the SCC in ...
Michael Evzelman, Sam Ben-Yaakov
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Reset Switching Probability of Resistive Switching Devices

IEEE Electron Device Letters, 2011
The reset switching probability of resistive switching devices is characterized in array testing. The measured switching probability can be quantitatively explained based on the mechanism of a thermally activated reset process. An analytical model of switching probability is developed to describe the dependence of reset probability on operation ...
null An Chen, null Ming-Ren Lin
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Resistance Switching in Electrodeposited Magnetite Superlattices

Journal of the American Chemical Society, 2010
Defect-chemistry magnetite superlattices and compositional superlattices in the magnetite/zinc ferrite system are electrodeposited as epitaxial films onto single-crystal Au(111). The defect-chemistry superlattices have alternating nanolayers with different Fe(III)/Fe(II) ratios, whereas the compositional superlattices have alternating nanolayers with ...
Jay A, Switzer   +5 more
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OxRAM Resistive Switching for DR Improvement

2018 IEEE International Symposium on Circuits and Systems (ISCAS), 2018
On-chip presence of emerging nonvolatile resistive memory devices provide opportunities to perform different types of computing and storage operations with several advantages. A unique application of oxide based resistive memory (OxRAM) devices in CMOS Image Sensors (CIS) for improvement of pixel dynamic range (DR) is proposed in this paper. In CIS, DR
Ashwani Kumar, Mukul Sarkar, Manan Suri
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AN ELECTRICALLY OPERATED SKIN RESISTANCE SWITCH

Psychophysiology, 1971
ABSTRACTA touch operated switch is described that uses a simple skin resistance detection circuit. This ‘isometric push‐button” type switch has no moving parts, is noiseless, and absorbs the minimum of energy from the subject. It was primarily designed for psychophysiological experiments where an operant response is required.
L, Macpherson   +2 more
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Resistive Switching Behavior in Ferroelectric Heterostructures

Small, 2019
AbstractResistive random‐access memory (RRAM) is a promising candidate for next‐generation nonvolatile random‐access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization‐dominated and defect‐dominated mechanisms. Under
Zhan Jie Wang, Yu Bai
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