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Versatile resistive switching in niobium oxide
2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016Resistive switching devices have a high potential for nonvolatile memories and circuit applications. This paper gives a review of the different switching modes in niobium oxide. Abrupt memory switching, threshold switching with or without memory switching and analog switching can be obtained by controlling the stoichiometry of the layer stack either ...
T. Mikolajick +4 more
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Switching in Resistance Tapchangers
2020Tapchangers are now made by several manufacturers around the world. Some designs are new, but some are decades old. Materials, designs, and physical arrangements differ. It is not possible, nor is it necessary to include in a book of this kind every execution.
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Resistive Switching Characteristics of ZnO Nanowires
Journal of Nanoscience and Nanotechnology, 2014Binary transition metal oxides such as ZnO, TiO2, and MnO; and their various structures such as thin film, nanowire, and nanoparticle assembly; have been widely investigated for use in insulators in resistive random access memory (ReRAM), considered a next-generation nonvolatile memory device. Among the various driving mechanisms of resistive switching
Yoo, Eun Ji +4 more
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Redox-Based Resistive Switching Memories
Journal of Nanoscience and Nanotechnology, 2012This review covers resistive random access memories which utilize redox processes and ionic motion on the nanoscale as their storage principle (ReRAM). Generic aspects are described in order to provide the physics and chemistry background for the explanation of the microscopic switching mechanism and of the high nonlinearity in the switching kinetics ...
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Sericin for Resistance Switching Device with Multilevel Nonvolatile Memory
Advanced Materials, 2013Hong Wang, Fanben Meng, Yurong Cai
exaly
Self‐Limited Switching in Ta2O5/TaOx Memristors Exhibiting Uniform Multilevel Changes in Resistance
Advanced Functional Materials, 2015Kyung Min Kim, Sungho Kim, Man Chang
exaly

