Results 171 to 180 of about 64,817 (269)

Resistive Memory-Switching Behavior in Solution-Processed Trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) Benzene-PVA-Composite-Based Aryl Acrylate on ITO-Coated PET. [PDF]

Polymers (Basel)
Kamath R, Sarkar P, Melanthota SK, Biswas R, Mazumder N, De S.   +5 more
europepmc   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

Conformational transitions in redissolved silk fibroin films and application for printable self-powered multistate resistive memory biomaterials. [PDF]

RSC Adv
Libera V, Malaspina R, Bittolo Bon S, Cardinali MA, Chiesa I, De Maria C, Paciaroni A, Petrillo C, Comez L, Sassi P, Valentini L.   +10 more
europepmc   +1 more source

Bio‐Inspired Multimodal Hardware Front‐End Enabled by 2D Floating‐Gate Memory for UAV Perception

Advanced Functional Materials, EarlyView.
A MoS2/h‐BN /graphene floating‐gate memory underpins a bio‐inspired multimodal front end that integrates visual, inertial, and airflow cues. A 4 × 4 FG memory array encodes temporal intensity differences, while IMU‐ and airflow‐driven threshold modulation suppresses self‐motion artifacts, enabling fast, low‐power, robust autonomous UAV tracking and ...
Lianghao Guo, Yue Cheng, Cong Li, Xiaoyu Guo, Jiankai Yin, Dadong Fan, Zhenyu Xu, Chenyu Tang, Arokia Nathan, Shuo Gao, Li Tao, Luigi G. Occhipinti   +11 more
wiley   +1 more source

Unsupervised Learning on Resistive Memory Array Based Spiking Neural Networks. [PDF]

Front Neurosci, 2019
Guo Y, Wu H, Gao B, Qian H.
europepmc   +1 more source

Inducing Ferromagnetism by Structural Engineering in a Strongly Spin‐Orbit Coupled Oxide

Advanced Functional Materials, EarlyView.
ABSTRACT Magnetic materials with strong spin‐orbit coupling (SOC) are essential for the advancement of spin‐orbitronic devices, as they enable efficient spin‐charge conversion, complex magnetic structures, spin‐valley physics, topological phases and other exotic phenomena.
Ji Soo Lim, Carmine Autieri, Merit Spring, Martin Kamp, Amar Fakhredine, Pavel Potapov, Daniel Wolf, Sergii Pylypenko, Axel Lubk, Johannes Schultz, Nicolas Perez, Börge Mehlhorn, Louis Veyrat, Mario Cuoco, Fadi Choueikan, Philippe Ohresser, Bernd Büchner, Giorgio Sangiovanni, Ralph Claessen, Michael Sing   +19 more
wiley   +1 more source

Rectifying Resistive Memory Devices as Dynamic Complementary Artificial Synapses. [PDF]

Front Neurosci, 2018
Berco D.
europepmc   +1 more source

Optoelectronic Control of Redox Dynamics in POM Memristors for Noise‐Resilient Speech and Hardware‐Level Motion Recognition

Advanced Functional Materials, EarlyView.
Optoelectronic control of redox‐active polyoxometalate clusters in polymer matrices yields hybrid memristors with switchable volatile and non‐volatile modes, enabling reservoir‐type in‐sensor optical preprocessing and stable multilevel synapses for multimodal neuromorphic computing, including noise‐tolerant audiovisual keyword recognition and hardware ...
Xiangyu Ma, Ziyu Lv, Guohua Zhang, Zhongyue Xu, Yongbiao Zhai, Haiming Huang, Qiyan Zhang, Xiaojin Zhao, Yan Wang, Ye Zhou, Ziyu Xiong, Guanglong Ding, Wentao Xu, Su‐Ting Han   +13 more
wiley   +1 more source

A study on mechanism of resistance distribution characteristics of oxide-based resistive memory. [PDF]

Sci Rep, 2019
Hur JH, Kim DK.
europepmc   +1 more source

Resistive memory: Total exposure [PDF]

NPG Asia Materials, 2011
openaire   +1 more source