Results 11 to 20 of about 64,817 (269)
Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction
Nanomaterials, 2021 Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device
Harshada Patil +6 more
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Ex Situ Transfer of Bayesian Neural Networks to Resistive Memory‐Based Inference Hardware
Advanced Intelligent Systems, 2021 Neural networks cannot typically be trained locally in edge‐computing systems due to severe energy constraints. It has, therefore, become commonplace to train them “ex situ” and transfer the resulting model to a dedicated inference hardware.
Thomas Dalgaty +4 more
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Overview of radiation effects on emerging non-volatile memory technologies [PDF]
Nuclear Technology and Radiation Protection, 2017 In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access ...
Fetahović Irfan S. +3 more
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Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching. [PDF]
PLoS ONE, 2016 Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM).
Adolfo Henrique Nunes Melo +1 more
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Scientific Reports, 2021 TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices.
Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
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Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell
Molecules, 2023 A facile sol–gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching ...
Zhiqiang Yu +8 more
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Results in Physics, 2019 With the memory device is required to be widely used in more complex environment, the exploration of new memory device have become a focus of research. Herein, a resistive switching memory device based on BiFeO3(BFO)/Cu2ZnSnSe4(CZTSe) heterostructure is ...
Xiaoxia Li +8 more
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Spectroscopic indications of tunnel barrier charging as the switching mechanism in memristive devices [PDF]
, 2017 Resistive random access memory is a promising, energy-efficient, low-power “storage class memory” technology that has the potential to replace both flash storage and on-chip dynamic memory.
Asamitsu +71 more
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2008 IEEE International Electron Devices Meeting, 2008 to be published in Digest of the International Electron Devices Meeting (IEDM) 2008, p.
Kreupl, Franz +11 more
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Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Advanced Materials Interfaces, 2023 To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang +8 more
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