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Oxide Heterostructure Resistive Memory
Nano Letters, 2013Resistive switching devices are widely believed as a promising candidate for future memory and logic applications. Here we show that by using multilayer oxide heterostructures the switching characteristics can be systematically controlled, ranging from unipolar switching to complementary switching and bipolar switching with linear and nonlinear on ...
Yuchao, Yang, ShinHyun, Choi, Wei, Lu
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Bayesian In-Memory Computing with Resistive Memories
2023 International Electron Devices Meeting (IEDM), 2023This paper explores three approaches using resistive memory for Bayesian near-memory and in-memory computing, leveraging their inherent randomness. The strategies include Bayesian machines for efficient near-memory computing, Bayesian neural networks exploiting randomness of synapses, and Bayesian learning utilizing the Metropolis-Hastings Markov Chain
Turck, C +15 more
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2023
The centuries-old neocolonial relationship between the United States and Latin America is marked by acts of silencing, either directly in the hands of U.S. foreign affairs organizations or by proxy governments economically supported by the United States.
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The centuries-old neocolonial relationship between the United States and Latin America is marked by acts of silencing, either directly in the hands of U.S. foreign affairs organizations or by proxy governments economically supported by the United States.
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Scaling limits of resistive memories
Nanotechnology, 2011This paper is intended to provide an expository, physics-based, framework for the estimation of the performance potential and physical scaling limits of resistive memory. The approach taken seeks to provide physical insights into those parameters and physical effects that define device performance and scaling properties.
Victor V, Zhirnov +3 more
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Nanoionics-based resistive switching memories
Nature Materials, 2007Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable.
Rainer, Waser, Masakazu, Aono
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Session 12: Memory technology - resistive memory and magnetic memory
2008 IEEE International Electron Devices Meeting, 2008Most updated progress in resistive memory is presented in the first part of this section. In the first paper, Dr. Waser presents the review of mechanism of resistive switching. Highly reliable ReRAM based on TaO x has exhibited the endurance over 109 cycles and 10 years retention at 85°C. With a thin reactive Ti buffer layer in HfO 2 based ReRAM, the
null Tzu-Ning Fang +1 more
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Redox-Based Resistive Switching Memories
Journal of Nanoscience and Nanotechnology, 2012This review covers resistive random access memories which utilize redox processes and ionic motion on the nanoscale as their storage principle (ReRAM). Generic aspects are described in order to provide the physics and chemistry background for the explanation of the microscopic switching mechanism and of the high nonlinearity in the switching kinetics ...
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ACM Transactions on Design Automation of Electronic Systems, 2019
Emerging computational resistive memory is promising to overcome the challenges of scalability and energy efficiency that DRAM faces and also break through the memory wall bottleneck. However, cell-level and array-level nonideal properties of resistive memory significantly degrade the reliability, performance, accuracy, and energy efficiency during ...
Chengning Wang +11 more
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Emerging computational resistive memory is promising to overcome the challenges of scalability and energy efficiency that DRAM faces and also break through the memory wall bottleneck. However, cell-level and array-level nonideal properties of resistive memory significantly degrade the reliability, performance, accuracy, and energy efficiency during ...
Chengning Wang +11 more
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Radiation Resistant MNOS Memories
IEEE Transactions on Nuclear Science, 1972Three types of memory transistor structures were subjected to gamma, neutron and electron radiation. The survival of stored information as a function of total dose and dose rate was recorded, and in addition, the effect of radiation on the overall writing and storage characteristics of the devices was studied.
H. A. R. Wegener +3 more
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