IEEE Access, 2020 In this study, the electrical characteristics of TiN/SiNx/TiN and TiN/Ag/SiNx/TiN RRAMs were thoroughly investigated through I-V measurements. Our novel Ag-inserted silicon nitride-based resistive switching memory (RRAM) achieved switching operation at ...
Yeon-Joon Choi +9 more
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First evidence of resistive switching in polycrystalline GaV4S8 thin layers [PDF]
, 2011 Recently a new type of reversible and non-volatile resistive switching was discovered in single crystals of Mott insulators AM4X8 (A = Ga, Ge; M = V, Nb, Ta; X = S, Se).
Beck +19 more
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Extending Non-Volatile Operation to DRAM Cells
IEEE Access, 2013 This paper deals with the design and evaluation of novel dynamic random access memory (DRAM) cells that have an oxide-based resistive element added for non-volatile operation.
Wei Wei +2 more
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Reconfigurable writing architecture for reliable RRAM operation in wide temperature ranges [PDF]
, 2016 Resistive switching memories [resistive RAM (RRAM)] are an attractive alternative to nonvolatile storage and nonconventional computing systems, but their behavior strongly depends on the cell features, driver circuit, and working conditions.
Aparicio Cerqueira, Hernán +5 more
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Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells [PDF]
, 2011 In this letter, we explore the influence of the Cu(x)Te(1-x) layer composition (0.2 0.7 leads to large reset power, similar to pure-Cu electrodes, x < 0.3 results in volatile forming properties.
Aratani K. +10 more
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Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices
Frontiers in Neuroscience, 2018 Resistance switching, or Resistive RAM (RRAM) devices show considerable potential for application in hardware spiking neural networks (neuro-inspired computing) by mimicking some of the behavior of biological synapses, and hence enabling non-von Neumann ...
Konstantin Zarudnyi +5 more
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Performance and reliability comparison of 1T-1R RRAM arrays with amorphous and polycrystalline HfO2 [PDF]
, 2016 In this work, a comparison between 1T-1R RRAM 4kbits arrays manufactured either with amorphous or polycrystalline HfO2 in terms of performance, reliability, Set/Reset operations energy requirements, intra-cell and inter-cell variability during 10k Set ...
Grossi, Alessandro +4 more
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Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays. [PDF]
, 2018 Resistive RAM crossbar arrays offer an attractive solution to minimize off-chip data transfer and parallelize on-chip computations for neural networks.
Jameson, John R +6 more
core +3 more sources
Design of Power- and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element
IEEE Journal of the Electron Devices Society, 2019 A 3 CNFETs and 2 memristors-based half-select disturbance free 3T2R resistive RAM (RRAM) cell is proposed in this paper. While the two memristors act as the nonvolatile memory elements, CNFETs are employed as high-performance switches.
Soumitra Pal +3 more
doaj +1 more source
Highly Scalable Neuromorphic Hardware with 1-bit Stochastic nano-Synapses
, 2013 Thermodynamic-driven filament formation in redox-based resistive memory and the impact of thermal fluctuations on switching probability of emerging magnetic switches are probabilistic phenomena in nature, and thus, processes of binary switching in these ...
Kavehei, Omid, Skafidas, Efstratios
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