Results 41 to 50 of about 1,751 (142)

Insight into physics-based RRAM models – review

The Journal of Engineering, 2019
This article presents a review of physical, analytical, and compact models for oxide-based RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect resistive switching and the different current conduction mechanisms that ...
Arya Lekshmi Jagath, Chee Hock Leong, T. Nandha Kumar, HaiderA.F. Almurib   +3 more
doaj   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

On the variability-aware design of memristor-based logic circuits [PDF]

, 2018
© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new ...
Escudero López, Manuel, Moll Echeto, Francisco de Borja, Rubio Sola, Jose Antonio, Vourkas, Ioannis   +3 more
core   +1 more source

Large‐Scale and Highly Reliable Hopfield Neural Networks Using Vertical NAND Flash Memory for the In‐Memory Associative Computing

Advanced Intelligent Systems, EarlyView.
Large‐scale Hopfield neural networks (HNNs) for associative computing are implemented using vertical NAND (VNAND) flash memory. The proposed VNAND HNN with the asynchronous update scenario achieve robust image restoration performance despite fabrication variations, while significantly reducing chip area (≈117× smaller than resistive random‐access ...
Jin Ho Chang, Jae Seung Woo, Suk‐Kang Sung, Ki‐Whan Song, Woo Young Choi   +4 more
wiley   +1 more source

SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography [PDF]

, 2014
textA highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography. The average nano-pillar height and diameter are 1.3 μm and
Ji, Li, active 21st century
core  

RRAM Reliability/Performance Characterization through Array Architectures Investigations [PDF]

, 2015
The reliability and performance characterization of each non-volatile memory technology requires the thorough investigation of dedicated array test structures that mimic the real operations of a fully functional integrated product.
Grossi, Alessandro, Olivo, Piero, Walczyk, Christian, Wenger, Christian, Zambelli, Cristian   +4 more
core   +1 more source

Triboelectric Tactile Transducers for Neuromorphic Sensing and Synaptic Emulation: Materials, Architectures, and Interfaces

Advanced Energy and Sustainability Research, Volume 7, Issue 3, March 2026.
Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar, Arunkumar Chandrasekhar, Poongundran Selvaprabhu   +2 more
wiley   +1 more source

Dendritic-Inspired Processing Enables Bio-Plausible STDP in Compound Binary Synapses

, 2018
Brain-inspired learning mechanisms, e.g. spike timing dependent plasticity (STDP), enable agile and fast on-the-fly adaptation capability in a spiking neural network. When incorporating emerging nanoscale resistive non-volatile memory (NVM) devices, with
Saxena, Vishal, Wu, Xinyu
core   +1 more source

Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
A charge‐domain ternary content‐addressable memory using one capacitor one nanoelectromechanical memory switch (1C‐1N TCAM) is proposed for energy‐efficient, high‐reliability computations. Integrated with the back‐end‐of‐line process, the 1C‐1N TCAM leverages the air gap capacitance to achieve a high capacitance ratio and ternary functionality.
Jin Wook Lee, Changha Kim, Geun Tae Park, Seung Hun Baek, Myeong Su Shin, Woo Young Choi   +5 more
wiley   +1 more source

Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance [PDF]

, 2016
Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the "OFF" state, of such devices is mainly hindered by resistance variation ...
Alff, L, Auf Der Maur, M, Calka, P, Di Carlo, A, Fraschke, M, Gautier, B, Guha, S, Hamoumou, P, Niu, G, Perez, E, Santoni, F, Schroeder, T, Walczyk, C, Wenger, C   +13 more
core   +4 more sources