Results 91 to 100 of about 4,425 (277)

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition [PDF]

, 2016
Gang Niu, Hee‐Dong Kim, Robin Roelofs, Eduardo Pérez, Markus Andreas Schubert, P. Zaumseil, I. Costina, Christian Wenger   +7 more
openalex   +1 more source

Electron–Matter Interactions During Electron Beam Nanopatterning

Advanced Functional Materials, EarlyView.
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima, Prathiba Thamizhavel, Taylor J. Woehl   +2 more
wiley   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Physical unclonable in-memory computing for simultaneous protecting private data and deep learning models

Nature Communications
Compute-in-memory based on resistive random-access memory has emerged as a promising technology for accelerating neural networks on edge devices. It can reduce frequent data transfers and improve energy efficiency.
Wenshuo Yue, Kai Wu, Zhiyuan Li, Juchen Zhou, Zeyu Wang, Teng Zhang, Yuxiang Yang, Lintao Ye, Yongqin Wu, Weihai Bu, Shaozhi Wang, Xiaodong He, Xiaobing Yan, Yaoyu Tao, Bonan Yan, Ru Huang, Yuchao Yang   +16 more
doaj   +1 more source

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Nature Communications, 2019
Resistive random-access memory is operated based on the formation and disruption of nanoscale conductive filaments, but a mechanistic understanding of this process remains unclear. Here, Wang et al.
Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini   +7 more
doaj   +1 more source

Toward Scalable Solutions for Silver‐Based Gas Diffusion Electrode Fabrication for the Electrochemical Conversion of CO2 – A Perspective

Advanced Functional Materials, EarlyView.
In this study, the preparation techniques for silver‐based gas diffusion electrodes used for the electrochemical reduction of carbon dioxide (eCO2R) are systematically reviewed and compared with respect to their scalability. In addition, physics‐based and data‐driven modeling approaches are discussed, and a perspective is given on how modeling can aid ...
Simon Emken, K. Ashoke Raman, Alexander Bauer, Violeta Karyofylli, Eva Jodat, André Karl, Rüdiger‐A. Eichel   +6 more
wiley   +1 more source

Enhancing Synaptic Plasticity and Multistate Retention of Organic Neuromorphic Devices Using Anion‐Excessive Gel Electrolyte

Advanced Functional Materials, EarlyView.
Anion‐excessive gel‐based organic synaptic transistors (AEG‐OSTs) that can maintain electrical neutrality are developed to enhance synaptic plasticity and multistate retention. Key improvement is attributed to the maintenance of electrical neutrality in the electrolyte even after electrochemical doping, which reduces the Coulombic force acting on ...
Yousang Won, Jeongwoo Lee, Hyunwook Kim, Joon Hak Oh   +3 more
wiley   +1 more source

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Materials Research Letters, 2019
The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the ...
Gang Niu, Pauline Calka, Peng Huang, Sankaramangalam Ulhas Sharath, Stefan Petzold, Andrei Gloskovskii, Karol Fröhlich, Yudi Zhao, Jinfeng Kang, Markus Andreas Schubert, Florian Bärwolf, Wei Ren, Zuo-Guang Ye, Eduardo Perez, Christian Wenger, Lambert Alff, Thomas Schroeder   +16 more
doaj   +1 more source

Sol-Gel-Processed Y₂O₃ Multilevel Resistive Random-Access Memory Cells for Neural Networks. [PDF]

Nanomaterials (Basel), 2023
Lee T, Kim HI, Cho Y, Lee S, Lee WY, Bae JH, Kang IM, Kim K, Lee SH, Jang J.   +9 more
europepmc   +1 more source

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

Advanced Functional Materials, EarlyView.
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa, Masaki Tsuji, Yoshihiro Furue, Yifan Geng, Satya P. Pati, Satoshi Hamasuna, Takeaki Yajima   +6 more
wiley   +1 more source