Results 81 to 90 of about 6,707 (290)
AIP Advances, 2023 This paper investigated the conductance-state stability of TiN/PrCaMnOx (PCMO)-based resistive random-access memory (RRAM), which serves as a kernel weight element in convolutional neural networks (CNNs), to realize accurate feature extraction from ...
Eunryeong Hong +6 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone +8 more
wiley +1 more source
A RRAM Integrated 4T SRAM with Self-Inhibit Resistive Switching Load by Pure CMOS Logic Process
Nanoscale Research Letters, 2017 This paper reports a novel full logic compatible 4T2R non-volatile static random access memory (nv-SRAM) featuring its self-inhibit data storing mechanism for in low-power/high-speed SRAM application.
Meng-Yin Hsu +4 more
doaj +1 more source
3D Printing Innovations in Polymeric Porous and Patterned Architecture
Advanced Functional Materials, EarlyView.Polymeric foams occupy a unique structural space between dense solids and open networks, where engineered void fraction governs mechanical compliance, thermal resistance, and mass transport. Additive manufacturing now enables precise spatial control over cellular architecture, unlocking designer foam structures across applications spanning crash ...
Dhanush Patil +13 more
wiley +1 more source
Remote control of resistive switching in TiO2 based resistive random access memory device. [PDF]
Sci Rep, 2017 We report on the magnetic field control of a bipolar resistive switching in Ag/TiO2/FTO based resistive random access memory device through I–V characteristics.
Sahu DP, Jammalamadaka SN.
europepmc +2 more sources
Electro‐Steric Ion Confinement in Polyelectrolyte Networks for Robust Nonvolatile Artificial Synapse
Advanced Functional Materials, EarlyView.Polyelectrolyte stoichiometry governs ion transport and retention in electrolyte‐gated synaptic transistors. A PSS‐rich network creates electro‐steric ion confinement that suppresses ion back‐diffusion and stabilizes channel doping, enabling robust nonvolatile synaptic memory, linear weight updates, and low‐energy operation.
Donghwa Lee +9 more
wiley +1 more source
Conductance quantization in resistive random access memory
, 2021 The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM ...
Liu, Ming +8 more
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Advanced Functional Materials, EarlyView.Thermally oxidized MoS2‐based radio‐frequency switches enable a multifunctional platform that unifies broadband RF switching and in‐memory computation. The device achieves a cutoff frequency of 33.2 THz with high energy efficiency and supports hardware‐aware signal processing.
Juho Son +5 more
wiley +1 more source
Effect of Oxygen Concentration Ratio on a Ga2O3-Based Resistive Random Access Memory
IEEE Access, 2019 In this study, we have successfully prepared gallium oxide resistive random access memory by RF magnetron sputtering. The various Ar/O2 gas flow was carefully controlled by different oxygen concentration to obtain proper Ga2O3 film.
Chih-Chiang Yang +5 more
doaj +1 more source
Optically readable resistive random access memory in silicon plasmonics platform
, 2014 We experimentally demonstrate resistive random access memory device integrated with a silicon plasmonic waveguide, and relying on the formation of nanoscale metallic needles.
Shappir, J +7 more
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