Results 61 to 70 of about 6,707 (290)

Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory

AIP Advances, 2020
Resistive random-access memory plays a key role in non-volatile and neuromorphic artificial electronic devices. In this work, we fabricated Ta/TaOx/AlN/Pt resistive memory devices with the inserted AlN layer to improve the performance.
Gang Cao, Xiaobing Yan, Jingjuan Wang, Zhenyu Zhou, Jianzhong Lou, Kaiyou Wang   +5 more
doaj   +1 more source

Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device

Materials Research Express, 2021
In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics.
Lilan Zou, Jianmei Shao, Dinghua Bao
doaj   +1 more source

Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing

, 2019
Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel ...
Wang, Dawei, Xie, Hao, Gao, Pingqi, Zhao, Zhenguo, Yin, Wen-Yan, Zhu, Guodong, Chen, Wenchao, Schutt-Aine, Jose   +7 more
core   +1 more source

Designing Polymer Nanocomposites for X‐Ray Shielding: Mechanisms, Architectures, and Scalable Processing

Advanced Engineering Materials, EarlyView.
This review highlights advances in lightweight, lead‐free polymer nanocomposites for diagnostic X‐ray shielding. By linking filler chemistry, dispersion, architecture, and photon interaction mechanisms, it establishes structure–performance relationships guiding material design.
Aklilu G. Messele, Hossein Ipakchi, Tizazu H. Mekonnen   +2 more
wiley   +1 more source

A Finite Element Model for Bipolar Resistive Random Access Memory

, 2014
The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects.
Choi, Woo Young, Park, Young-Kwan, Lee, Kwangseok, Lee, Keun-Ho, Kim, Kwanyong   +4 more
core   +1 more source

Comprehensive Examination on Resistive Random Access Memory

International Journal of Recent Technology and Engineering (IJRTE), 2019
With the latest advances in materials science, resistive random access memory (RRAM) devices are attracting non-volatile, low power consumption, non-destructive read, and high density memory. Related performance parameters for RRAM devices include operating voltage, operating speed, resistivity, durability, retention time, device yield, and multi-level
Dr.K.G. Dharani*, Dr.S. Bhavani, S. Hridhya   +2 more
openaire   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Reversible electrical percolation in a stretchable and self-healable silver-gradient nanocomposite bilayer

Nature Communications, 2022
Smart healthcare devices, which interacts with the human body by recording, analyzing and processing physiological signals, need soft and biocompatible electronics. Here, Son et al. report a self-healable and stretchable resistive switching random-access
Jinhong Park, Duhwan Seong, Yong Jun Park, Sang Hyeok Park, Hyunjin Jung, Yewon Kim, Hyoung Won Baac, Mikyung Shin, Seunghyun Lee, Minbaek Lee, Donghee Son   +10 more
doaj   +1 more source

Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles [PDF]

, 2011
It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large
Asal Kiazadeh, Paulo R. F. Rocha, Qian Chen 0025, Henrique L. Gomes   +3 more
openaire   +2 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source