Results 41 to 50 of about 6,707 (290)
Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures
IEEE Journal of the Electron Devices Society, 2016 Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied.
Jinfeng Kang +8 more
doaj +1 more source
Hybrid flexible resistive random access memory-gated transistor for novel nonvolatile data storage
, 2016 Here, a single‐device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch ...
Sun, Qijun +9 more
core +1 more source
Materials Research Express, 2020 Cerium oxide-based memristors have been extensively studied because of their compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is one of the main contests in development of nonvolatile memory for commercialization ...
Muhammad Ismail +6 more
doaj +1 more source
npj Computational Materials, 2020 Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple resistance states, arising from the activation/deactivation of a conductive filament (CF) inside a switching layer.
Kena Zhang +5 more
doaj +1 more source
Gradual reset and set characteristics in yttrium oxide based resistive random access memory [PDF]
, 2021 This paper addresses the resistive switching behavior in yttrium oxide based resistive random access memory (RRAM) (TiN/yttrium oxide/Pt) devices. We report the coexistence of bipolar and unipolar resistive switching within a single device stack.
Zintler, Alexander +7 more
core +1 more source
Resistive Random Access Memory Variability and Its Mitigation Schemes
Journal of Low Power Electronics, 2017 The need for design of new computing and storage paradigms has leaded to the emergence of new technologies and procedures. Among these technologies, emerging non-volatile memories such as RRAMs are getting intense attention due to their attractive characteristics such as scalability and CMOS friendly manufacturing.
Pouman, Peyman +3 more
openaire +3 more sources
Tumor B‐cell infiltration in platinum‐treated advanced muscle‐invasive urothelial carcinoma
Molecular Oncology, EarlyView.Bladder tumors with higher pretreatment memory B‐cell infiltration were linked to longer survival after cisplatin chemotherapy, but not carboplatin. These tumors also showed more organized immune structures (tertiary lymphoid structures) and a shared pro‐inflammatory B‐cell‐rich community, suggesting that memory B cells may help identify patients most ...
Konrad Stawiski +10 more
wiley +1 more source
Advanced Intelligent Systems, 2022 Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. Here, bipolar resistive switching in point‐contacted W/LaAlO3/SrTiO3(111)
Xin Gan +7 more
doaj +1 more source
Multiscale Modeling for Application-Oriented Optimization of Resistive Random-Access Memory. [PDF]
Materials (Basel), 2019 Memristor-based neuromorphic systems have been proposed as a promising alternative to von Neumann computing architectures, which are currently challenged by the ever-increasing computational power required by modern artificial intelligence (AI) algorithms.
La Torraca P +3 more
europepmc +5 more sources
Annals of Clinical and Translational Neurology, EarlyView.ABSTRACT Background Emerging evidence suggests that low‐frequency neural oscillations are dynamically regulated by consciousness levels, with the recovery of low cortical activity potentially serving as a neurophysiological substrate for conscious emergence. Targeted enhancement of these low‐frequency rhythms in patients with disorders of consciousness
Chuan Xu +10 more
wiley +1 more source