Results 21 to 30 of about 6,707 (290)
A comprehensive investigation of MoO3 based resistive random access memory. [PDF]
RSC Adv, 2020 The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics.
Fatheema J +6 more
europepmc +2 more sources
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory
Proceedings of 2013 International Conference on IC Design & Technology (ICICDT), 2013 In this paper, a compact model of hafnium-oxide-based resistive random access memory (RRAM) cell is developed. The proposed model includes the effect of the temperature and cycle-to-cycle stochastic variations affecting the device operations.
Andrea Padovani +7 more
core +2 more sources
All Nonmetal Resistive Random Access Memory. [PDF]
Sci Rep, 2019 AbstractTraditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N+-Si/SiOx/P+-Si
Yen TJ +4 more
europepmc +4 more sources
IEEE Access, 2021 Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed.
Usman Bature Isyaku +4 more
doaj +1 more source
Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Advanced Materials Interfaces, 2023 To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang +8 more
doaj +1 more source
Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction
Nanomaterials, 2021 Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device
Harshada Patil +6 more
doaj +1 more source
Spike-time dependent plasticity of tailored ZnO nanorod-based resistive memory for synaptic learning
Journal of Science: Advanced Materials and Devices, 2023 Metal oxide resistive memory is a potential device that can substantially influence the current roadmap for nonvolatile memory and neuromorphic computing.
Shubham V. Patil +9 more
doaj +1 more source
Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design [PDF]
, 2015 Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to
Wang, Frank Z. +6 more
core +1 more source
Bio-Organic based Resistive Switching Random-Access Memory
, 2023 A non-volatile memory is a solid-state device that can retain data even when power supply is terminated. It is an essential data storage device that serves as a backbone for the advancement of Internet-of-Things.
Cheong, Kuan Yew +2 more
core +1 more source
A ZnTaOx Based Resistive Switching Random Access Memory [PDF]
ECS Solid State Letters, 2014 The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of
Zheng, K. +5 more
openaire +1 more source