Results 31 to 40 of about 6,707 (290)
Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]
, 2008 The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Stefano Di Carlo +7 more
core +1 more source
Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching. [PDF]
PLoS ONE, 2016 Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM).
Adolfo Henrique Nunes Melo +1 more
doaj +1 more source
Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory
Nanomaterials, 2016 ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs.
Yunfeng Lai +5 more
doaj +1 more source
Research progresses of resistive random access memory [PDF]
SCIENTIA SINICA Physica, Mechanica & Astronomica, 2016 Resistive random access memory (RRAM) is one of the most promising candidates of next-generation non-volatile memories. Comparing with the traditional floating gate Flash memory, RRAM has advantages in cell structure, operation speed, scalability and ease of 3D integration. In this paper, the RRAM technology is systematically reviewed.
Qi LIU +3 more
openaire +1 more source
Glucose-based resistive random access memory for transient electronics
Journal of Information Display, 2019 In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 ...
Sung Pyo Park +3 more
doaj +1 more source
Automating defects simulation and fault modeling for SRAMs [PDF]
, 2008 The continues improvement in manufacturing process density for very deep sub micron technologies constantly leads to new classes of defects in memory devices. Exploring the effect of fabrication defects in future technologies, and identifying new classes
Stefano Di Carlo +9 more
core +1 more source
Recent advances in resistive random access memory based on lead halide perovskite
InfoMat, 2021 Lead halide perovskites have attracted increasing attention in photovoltaic devices, light‐emitting diodes, photodetectors, and other fields due to their excellent properties. Besides optoelectronic devices, growing numbers of studies have focused on the
Jiayu Di +5 more
doaj +1 more source
An overview of resistive random access memory devices [PDF]
Chinese Science Bulletin, 2011 With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and ...
Li, YingTao +5 more
openaire +1 more source
Memories - Materials, Devices, Circuits and Systems, 2023 Resistive switching (RS) behavior of bilayer of poly(4-vinylphenol) (PVP): molybdenum disulfide (MoS2) nanocomposite (NC) and TiO2 in resistive random-access memory (RRAM) devices were explored.
Shalu Saini +4 more
doaj +1 more source
Perspective: Uniform switching of artificial synapses for large-scale neuromorphic arrays
APL Materials, 2018 Resistive random-access memories are promising analog synaptic devices for efficient bio-inspired neuromorphic computing arrays. Here we first describe working principles for phase-change random-access memory, oxide random-access memory, and conductive ...
Scott H. Tan +5 more
doaj +1 more source