Results 91 to 100 of about 6,707 (290)

A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology

open access: yes, 2017
Resistive random access memory (RRAM) has shown the potential to become the future universal memory. The novel concept of complementary resistive switching (CRS) provides the promise of a high-density, selector-less RRAM crossbar array implementation ...
Zhang, Haizhong
core   +1 more source

Thermally Pre‐Formed Reconfigurable Resistive Random‐Access Memory Crossbar Arrays: A Dual‐Mode Platform for Robust Physically Unclonable Functions and In‐Memory Computing

open access: yesAdvanced Functional Materials, EarlyView.
A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon   +4 more
wiley   +1 more source

Multistate resistive switching in silver nanoparticle films

open access: yesScience and Technology of Advanced Materials, 2015
Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications.
Eric J Sandouk   +2 more
doaj   +1 more source

Multidimensional Cellular Micro‐Compartments to Model Invasive Lobular Carcinoma Dormancy

open access: yesAdvanced Healthcare Materials, EarlyView.
Invasive lobular carcinoma (ILC) is an understudied subtype of breast cancer that is susceptible to late recurrences. In this study, micro‐compartmentalization techniques spanning multiple dimensions, including 2D, pseudo‐3D, and 3D, are integrated to uncover the mechanisms underlying ILC dormancy, revealing the central role of p27Kip1.
Xilal Y. Rima   +15 more
wiley   +1 more source

Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance

open access: yes, 2022
Resistive random access memory (ReRAM) is touted to replace silicon-based flash memory due to its low operating voltage, fast access speeds, and the potential to scale down to nm range for ultra-high density storage.
Izzat Aziz   +6 more
core   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

open access: yesAdvanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades   +7 more
wiley   +1 more source

Effect of AC pulse overshoot on nonlinearity and reliability of selectorless resistive random access memory in AC pulse operation

open access: yes, 2018
The effect of AC pulse engineering on the nonlinearity and reliability of selectorless resistive random access memory was investigated in order to implement a high-density cross-point array.
Hwang, H   +5 more
core   +1 more source

Physical Simulation of Si-Based Resistive Random-Access Memory Devices [PDF]

open access: yes, 2015
We present a newly-developed three-dimensional (3D) physical simulator suitable for the study of resistive random-access memory (RRAM) devices. We explore the switching behavior of Si-rich silica (SiOx) RRAM structures, whose operation has been ...
Asenov, Asen   +7 more
core   +1 more source

3D Anodic Alumina Nanoarchitectures: A Decade of Progress from Foundational Science to Functional Metamaterials

open access: yesAdvanced Materials, EarlyView.
Ordered three‐dimensional anodic aluminum oxide (3D‐AAO) nanoarchitectures with longitudinal and transverse pores enable architecture‐driven metamaterials. The review maps fabrication advances, including hybrid pulse anodization, and shows how 3D‐AAO templates tailor properties across magnetism, energy, catalysis, and sensing.
Marisol Martín‐González
wiley   +1 more source

Quantum Dots for Resistive Switching Memory and Artificial Synapse

open access: yesNanomaterials
Memristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim   +2 more
doaj   +1 more source

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