Results 121 to 130 of about 3,312 (212)

FangTianSim: High-Level Cycle-Accurate Resistive Random-Access Memory-Based Multi-Core Spiking Neural Network Processor Simulator. [PDF]

Front Neurosci, 2021
Wei J, Wang Z, Li Y, Lu J, Jiang H, An J, Li Y, Gao L, Zhang X, Shi T, Liu Q.   +10 more
europepmc   +1 more source

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

Advanced Materials Technologies, EarlyView.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li, Padma Srivari, Mari Honkanen, Turkka Salminen, Sayani Majumdar   +4 more
wiley   +1 more source

Analysis of Leakage Current of HfO₂/TaO_x-Based 3-D Vertical Resistive Random Access Memory Array. [PDF]

Micromachines (Basel), 2021
Chen Z, Song R, Huo Q, Ren Q, Zhang C, Li L, Zhang F.   +6 more
europepmc   +1 more source

Transducers Across Scales and Frequencies: A System‐Level Framework for Multiphysics Integration and Co‐Design

Advanced Materials Technologies, EarlyView.
Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu, Mengyao Xiao, Zhouli Sui, Yinpeng Wang, Daoye Zheng, Yuxin Liu, Luwei Wang, Huajun Liu, Chengkuo Lee   +8 more
wiley   +1 more source

Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO₃ Layers. [PDF]

Nanomaterials (Basel)
Liu K, Jiang W, Zhou L, Zhou Y, Hu M, Geng Y, Zhang Y, Qiao Y, Wang R, Sun Y.   +9 more
europepmc   +1 more source

Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM). [PDF]

Micromachines (Basel), 2021
Zahoor F, Hussin FA, Khanday FA, Ahmad MR, Mohd Nawi I.   +4 more
europepmc   +1 more source

Lead‐Free Bismuth Halide Perovskite Memristors: Low‐Voltage Switching and Physical Modeling of Resistive Hysteresis

Advanced Materials Technologies, EarlyView.
Lead‐free bismuth halide perovskite memristors exhibit stable low‐voltage resistive switching behavior. The conductance‐activated quasi‐linear memristor model quantitatively reproduces the experimental hysteresis, confirming ion migration‐driven filament dynamics.
So‐Yeon Kim, Gonzalo Rivera‐Sierra, Bitania Shiferaw Mengesha, Benjamin Iniguez, Juan Bisquert   +4 more
wiley   +1 more source

Investigation of key performance metrics in TiO_X/TiN based resistive random-access memory cells. [PDF]

Sci Rep
Zink BR, Borders WA, Madhavan A, Hoskins BD, McClelland J.   +4 more
europepmc   +1 more source

Microfluidic Hydroporation Platform for Effective Allogeneic CAR‐T Cell Production and Subsequent Functional Cytotoxicity Analysis

Advanced Materials Technologies, EarlyView.
The hydroporator platform employs controlled hydrodynamic deformation for efficient mRNA and CRISPR/Cas9 delivery into primary human T cells, enabling allogeneic CAR‐T cell manufacturing. It preserves cell functionality and drives potent gene editing, CAR expression, and tumor cytotoxicity, while feature‐based analysis links these functional outcomes ...
Soohyun Jeon, Sein Kim, Hyun‐Young Kim, Duck Cho, Sungsu Park, Seohyun Kim, Aram J. Chung   +6 more
wiley   +1 more source

Scindapsus Aureus Resistive Random-Access Memory with Synaptic Plasticity and Sound Localization Function. [PDF]

Nanomaterials (Basel)
Wang L, Xie J, Su W, Du Z, Zhang M.
europepmc   +1 more source