Results 141 to 150 of about 6,707 (290)

Transducers Across Scales and Frequencies: A System‐Level Framework for Multiphysics Integration and Co‐Design

Advanced Materials Technologies, EarlyView.
Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu, Mengyao Xiao, Zhouli Sui, Yinpeng Wang, Daoye Zheng, Yuxin Liu, Luwei Wang, Huajun Liu, Chengkuo Lee   +8 more
wiley   +1 more source

The Spectral Response of the Dual Microdisk Resonator Based on BaTiO₃ Resistive Random Access Memory. [PDF]

Micromachines (Basel), 2022
Chuang RW, Liu BL, Huang CL.
europepmc   +1 more source

Recent Advances of Slip Sensors for Smart Robotics

Advanced Materials Technologies, EarlyView.
This review summarizes recent progress in robotic slip sensors across mechanical, electrical, thermal, optical, magnetic, and acoustic mechanisms, offering a comprehensive reference for the selection of slip sensors in robotic applications. In addition, current challenges and emerging trends are identified to advance the development of robust, adaptive,
Xingyu Zhang, Liao Wu, Shuai He, Zhao Sha, Yuwan Huang, Shuying Wu, Dewei Chu, Chun H. Wang, Shuhua Peng   +8 more
wiley   +1 more source

Sol-Gel-Processed Y₂O₃-Al₂O₃ Mixed Oxide-Based Resistive Random-Access-Memory Devices. [PDF]

Nanomaterials (Basel), 2023
Kim HI, Lee T, Cho Y, Lee S, Lee WY, Kim K, Jang J.   +6 more
europepmc   +1 more source

Radiation Effects of Commercial Resistive Random Access Memories

, 2014
We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets.
Roche, Nicolas, Berg, Melanie, Figueiredo, Marco, Buchner, Stephen, Khachatrian, Ani, Phan, Anthony, Kim, Hak, LaBel, Kenneth A., Chen, Dakai, Wilcox, Edward   +9 more
core  

Bidirectional Process Prediction in the Laser‐Induced‐Graphene Production Using Blackbox Deep Learning

Advanced Materials Technologies, EarlyView.
This study shows that a lightweight blackbox neural network provides a practical, cost‐effective solution for bidirectional process prediction in laser‐induced graphene (LIG) fabrication. Achieving high predictive performance with minimal overhead, the approach democratizes machine learning (ML) for resource‐limited environments.
Maxim Polomoshnov, Nitheesh M. Nair, Gerardo Hernández‐Sosa, Markus Reischl   +3 more
wiley   +1 more source

Radiation-Tolerant Bipolar Resistive Switching Characteristics of Hybrid Polymer–Oxide Composites for Resistive Random Access-Memory Applications

Engineering Proceedings
In this study, ZnO thin films were prepared on the flexible stainless steel (FSS) substrates by the sol–gel method. ZnO nanorods were then hydrothermally grown in the presence of polyvinyl pyrrolidone (PVP) to obtain polymer/nanooxide composites.
Ming-Cheng Kao, Kai-Huang Chen, Yi-Kai Kao, Wei-Chou Chen   +3 more
doaj   +1 more source

Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiO_x/Al Resistive Random Access Memory Devices. [PDF]

Materials (Basel), 2023
Lee JK, Pyo J, Kim S.
europepmc   +1 more source

Resistive random access memory based on organic-metallic hybrid polymer [PDF]

Resistive random access memories (ReRAMs) based on an organic-metallic hybrid polymer, Poly(Fe-btpyb) Purple, were fabricated. This material was synthesized by complexation of metal ions and organic ligands.
40500195, 小野島, 紀夫, Onojima, Norio, Shigemori, Kairi, Sano, Teppei, 24788, オノジマ, ノリオ   +6 more
core  

Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

Advanced Materials Technologies, EarlyView.
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi, Ho Jin Lee, Seok Hee Hong, Jae Seong Park, Chan Ho Ryu, Kyeong Heon Kim, Tukaram D. Dongale, Tae Geun Kim   +7 more
wiley   +1 more source