Results 121 to 130 of about 6,707 (290)

Total dose hardness of TiN/HfOx/TiN resistive random access memory

, 2014
Resistive random access memory based on TiN/HfOx/TiN has been fabricated, with the stoichiometry of the HfOx layer altered through control of atomic layer deposition (ALD) temperature. Sweep and pulsed electrical characteristics were extracted before and
Potter, Kenneth, Redman-White, William, Potter, K, De Groot, Cornelis, Morgan, Katrina, Shaw, Chris, Huang, Ruomeng, de Groot, Kees   +7 more
core   +1 more source

Weaving Intelligence: Thermally Drawn Multimaterial Fibers Toward AI‐Enabled Smart Textiles

Advanced Materials, EarlyView.
Thermally drawn multimaterial fibers are rapidly advancing as intelligent structural units for next‐generation smart textiles. Integrating multimaterial architectures with neuromorphic and spiking‐neural‐network principles enables fabrics that can sense, compute, and adapt autonomously.
Vuong Dinh Trung, Jiaxiang Yi, Hieu Nguyen‐Duc, Tien Nu Hoang Lo, Weili Zhao, Chaoqun Dong, Fabien Sorin, Baris Caglar, Lei Wei, Tung Nguyen‐Dang   +9 more
wiley   +1 more source

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Nature Communications, 2019
Resistive random-access memory is operated based on the formation and disruption of nanoscale conductive filaments, but a mechanistic understanding of this process remains unclear. Here, Wang et al.
Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini   +7 more
doaj   +1 more source

Sol-Gel-Processed Y₂O₃ Multilevel Resistive Random-Access Memory Cells for Neural Networks. [PDF]

Nanomaterials (Basel), 2023
Lee T, Kim HI, Cho Y, Lee S, Lee WY, Bae JH, Kang IM, Kim K, Lee SH, Jang J.   +9 more
europepmc   +1 more source

Designable van der Waals Crystal for Artificial Neuronal Cell Mimicking

Advanced Materials, EarlyView.
Designable van der Waals crystal has been demonstrated for device‐scale neuronal cell mimicking. The structural similarity between ion‐channel in biological membranes and layered vdW lattices is realized with nano‐crystallization via Ar + H2S plasma sulfurization.
Jinhyoung Lee, Gunhyoung Kim, Dongho Lee, Seowoo Son, Hyunho Seok, Sihoon Son, Hyunbin Choi, Geonwook Kim, Geumji Back, Hyunkyu Kim, Chaerin Park, Junmin Ahn, Seongyun Je, Chaeyoung Im, Junil Cho, Magdalena Grzeszczyk, Seongho Kim, Eunseo Go, Hyunwoo Shim, Donghwan Choi, Muyoung Kim, Hyoeng‐U. Kim, Won‐Jun Jang, Taesung Kim   +23 more
wiley   +1 more source

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Materials Research Letters, 2019
The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the ...
Gang Niu, Pauline Calka, Peng Huang, Sankaramangalam Ulhas Sharath, Stefan Petzold, Andrei Gloskovskii, Karol Fröhlich, Yudi Zhao, Jinfeng Kang, Markus Andreas Schubert, Florian Bärwolf, Wei Ren, Zuo-Guang Ye, Eduardo Perez, Christian Wenger, Lambert Alff, Thomas Schroeder   +16 more
doaj   +1 more source

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing. [PDF]

Discov Nano, 2023
Zahoor F, Hussin FA, Isyaku UB, Gupta S, Khanday FA, Chattopadhyay A, Abbas H.   +6 more
europepmc   +1 more source

Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films

, 2018
We report the effects of bottom electrode shapes on resistive random-access memory (RRAM) devices composed of Nb (bottom electrode)/NiO (dielectric)/Nb (top electrode) structures.
Jong Yeog Son, Tae Hoon Lee, Hyun Wook Shin, Yoonho Ahn, Woo-Hee Kim   +4 more
core   +1 more source

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

Advanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang, Soohyeon Kim, Tony Chiang, Megan K. Lenox, Ian Mercer, John J. Plombon, Jon‐Paul Maria, Jon F. Ihlefeld, Wenhao Sun, Wei Lu, John T. Heron   +10 more
wiley   +1 more source

Structural analysis of anodic porous alumina used for resistive random access memory

Science and Technology of Advanced Materials, 2010
Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect.
Jeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu Kido
doaj