An Improved Algorithm for Drift Diffusion Transport and Its Application on Large Scale Parallel Simulation of Resistive Random Access Memory Arrays [PDF]
Da‐Wei Wang +6 more
openalex +1 more source
The concept of spatially‐controlled planar guided crystallization is a novel method for programming the growth of optically homogeneous low‐loss Sb2S3 phase‐change material (PCM), leveraging the directional crystallization within confined channels.
Fouad Bentata +16 more
wiley +1 more source
Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide
Ultralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements.
M. Asif, Rajib K. Rakshit, Ashok Kumar
doaj +1 more source
Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device [PDF]
Kazuya Nakayama, Akio Kitagawa
openalex +1 more source
Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect [PDF]
Xiaohan Wu +11 more
openalex +1 more source
Sculpting the Future of Bone: The Evolution of Absorbable Materials in Orthopedics
This review summarizes the current status of polymeric, ceramic, and metallic absorbable materials in orthopedic applications, and highlights several innovative strategies designed to enhance mechanical performance, control degradation, and promote bioactivity. We also discuss the progress and translational potential of absorbable materials in treating
Zhao Wang +13 more
wiley +1 more source
An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array. [PDF]
Kao YF, Shih JR, Lin CJ, King YC.
europepmc +1 more source
A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices [PDF]
Debasis Das, Xuanyao Fong
openalex +1 more source
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Junhyung Cho +9 more
wiley +1 more source

