Results 161 to 170 of about 4,425 (277)

Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

, 2014
Zizhen Jiang, S.S. Wong
openalex   +1 more source

Origin of defects responsible for charge transport in resistive random access memory based on hafnia [PDF]

, 2013
Damir R. Islamov, Timofey V. Perevalov, V. A. Gritsenkov, В. Ш. Алиев, Аndrey А. Saraev, В. В. Каичев, Е. В. Иванова, M. V. Zamoryanskaya, C. H. Cheng, Albert Chin   +9 more
openalex   +1 more source

Performance Limit and Coding Schemes for Resistive Random-Access Memory Channels [PDF]

, 2020
Guanghui Song, Kui Cai, Xingwei Zhong, Yu Jiang, Jun Cheng   +4 more
openalex   +1 more source

Organic Electrochemical Transistors for Neuromorphic Devices and Applications

Advanced Materials, EarlyView.
Organic electrochemical transistors are emerging as promising platforms for neuromorphic devices that emulate neuronal and synaptic activities and can seamlessly integrate with biological systems. This review focuses on resultant organic artificial neurons, synapses, and integrated devices, with an emphasis on their ability to perform neuromorphic ...
Kexin Xiang, Jiajun Song, Hong Liu, Junxin Chen, Feng Yan   +4 more
wiley   +1 more source

Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO₃ Layers. [PDF]

Nanomaterials (Basel)
Liu K, Jiang W, Zhou L, Zhou Y, Hu M, Geng Y, Zhang Y, Qiao Y, Wang R, Sun Y.   +9 more
europepmc   +1 more source

Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM). [PDF]

Micromachines (Basel), 2021
Zahoor F, Hussin FA, Khanday FA, Ahmad MR, Mohd Nawi I.   +4 more
europepmc   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Investigation of key performance metrics in TiO_X/TiN based resistive random-access memory cells. [PDF]

Sci Rep
Zink BR, Borders WA, Madhavan A, Hoskins BD, McClelland J.   +4 more
europepmc   +1 more source

Field‐Free, Deterministic Giant Spin‐Orbit Torque Switching of 1.3 T Perpendicular Magnetization With Symmetry‐Lifted Topological Surface States

Advanced Materials, EarlyView.
We show a giant, bias‐field free, deterministic, spin‐orbit‐torque switching of perpendicular hard magnets with HC over 1.3 T. By combining the three‐fold 3m symmetry from topological insulator surface states with the rectangular mm2 symmetry from the 2 x 1 intercalation in Cr3Te4, the interface symmetry is significantly reduced into a unidirectional m
He Ren, Yawen Peng, Meixin Cheng, Yu Shi, Reza Asadi, Adam W. Tsen, Guo‐Xing Miao   +6 more
wiley   +1 more source

Stability-Enhanced Resistive Random-Access Memory via Stacked In _x Ga_1-x O by the RF Sputtering Method. [PDF]

ACS Omega, 2021
Huang WL, Lin YZ, Chang SP, Lai WC, Chang SJ.   +4 more
europepmc   +1 more source