Results 131 to 140 of about 62,185 (316)

A data-driven Verilog-A ReRam model

The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic yet computationally efficient device models.
Khiat, Ali, Messaris, Ioannis, Nikolaidis, Spyridon, Prodromakis, Themis, Serb, Alexander   +4 more
core   +1 more source

Bio‐Inspired Molecular Events in Poly(Ionic Liquids)

Advanced Functional Materials, EarlyView.
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley   +1 more source

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Nature Communications, 2019
Resistive random-access memory is operated based on the formation and disruption of nanoscale conductive filaments, but a mechanistic understanding of this process remains unclear. Here, Wang et al.
Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini   +7 more
doaj   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source

Physical unclonable in-memory computing for simultaneous protecting private data and deep learning models

Nature Communications
Compute-in-memory based on resistive random-access memory has emerged as a promising technology for accelerating neural networks on edge devices. It can reduce frequent data transfers and improve energy efficiency.
Wenshuo Yue, Kai Wu, Zhiyuan Li, Juchen Zhou, Zeyu Wang, Teng Zhang, Yuxiang Yang, Lintao Ye, Yongqin Wu, Weihai Bu, Shaozhi Wang, Xiaodong He, Xiaobing Yan, Yaoyu Tao, Bonan Yan, Ru Huang, Yuchao Yang   +16 more
doaj   +1 more source

Novel Functional Materials via 3D Printing by Vat Photopolymerization

Advanced Functional Materials, EarlyView.
This Perspective systematically analyzes strategies for incorporating functionalities into 3D‐printed materials via Vat Photopolymerization (VP). It explores the spectrum of achievable functionalities in recently reported novel materials—such as conductive, energy‐storing, biodegradable, stimuli‐responsive, self‐healing, shape‐memory, biomaterials, and
Sergey S. Nechausov, Patrick Fesser, Boris A. Bulgakov, Ulrich S. Schubert   +3 more
wiley   +1 more source

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Materials Research Letters, 2019
The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the ...
Gang Niu, Pauline Calka, Peng Huang, Sankaramangalam Ulhas Sharath, Stefan Petzold, Andrei Gloskovskii, Karol Fröhlich, Yudi Zhao, Jinfeng Kang, Markus Andreas Schubert, Florian Bärwolf, Wei Ren, Zuo-Guang Ye, Eduardo Perez, Christian Wenger, Lambert Alff, Thomas Schroeder   +16 more
doaj   +1 more source

Sol-Gel-Processed Y₂O₃ Multilevel Resistive Random-Access Memory Cells for Neural Networks. [PDF]

Nanomaterials (Basel), 2023
Lee T, Kim HI, Cho Y, Lee S, Lee WY, Bae JH, Kang IM, Kim K, Lee SH, Jang J.   +9 more
europepmc   +1 more source

s‐Orbital Mediated Metavalent Bonding Enables State‐Of‐The‐Art n‐Type AgBiSe2 Thermoelectrics

Advanced Functional Materials, EarlyView.
Metavalent bonding (MVB) underpins the exceptional property portfolio of chalcogenides. Typical MVB solids are mainly found in p‐bonded systems. This work reveals that MVB can also be formed with s‐p orbital interactions upon forming a single‐electron σ‐bond, as exemplified in AgBiSe2.
Binrong Huang, Dasol Kim, Yuan Yu, Jinxuan Zhong, Jianbo Zhu, Yaoling Shen, Yu Guo, Moran Wang, Jiawei Huang, Tu Lyu, Nan Lin, Yongsheng Zhang, Matthias Wuttig, Lipeng Hu   +13 more
wiley   +1 more source

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source