Results 151 to 160 of about 30,168 (284)
Unraveling the Role of Polydopamines in Resistive Switching in Al/Polydopamine/Al Structure for Organic Resistive Random-Access Memory. [PDF]
Yun J, Kim D.
europepmc +1 more source
Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades +7 more
wiley +1 more source
Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides. [PDF]
Xie H +6 more
europepmc +1 more source
Ordered three‐dimensional anodic aluminum oxide (3D‐AAO) nanoarchitectures with longitudinal and transverse pores enable architecture‐driven metamaterials. The review maps fabrication advances, including hybrid pulse anodization, and shows how 3D‐AAO templates tailor properties across magnetism, energy, catalysis, and sensing.
Marisol Martín‐González
wiley +1 more source
Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction. [PDF]
Zang C +6 more
europepmc +1 more source
An injectable cold atmospheric plasma‐activated decellularized tumor extracellular matrix hydrogel is introduced as a post‐surgical immunoactivation platform. The engineered gel attracts residual tumor cells and induces immunogenic cell death, reshaping the tumor microenvironment and eliciting systemic antitumor immunity. In combination with checkpoint
Tianxu Fang +5 more
wiley +1 more source
Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide
Ultralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements.
M. Asif, Rajib K. Rakshit, Ashok Kumar
doaj +1 more source
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array. [PDF]
Kao YF, Shih JR, Lin CJ, King YC.
europepmc +1 more source
A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho +3 more
wiley +1 more source

