Results 261 to 270 of about 62,185 (316)

Reliable and Robust Two-Dimensional Perovskite Memristors for Flexible-Resistive Random-Access Memory Array.

ACS Nano
Two-dimensional (2D) halide perovskites have become a promising class of memristive materials due to their low power consumption, compositional versatility, and microstructural anisotropy in electronics.
Seung Ju Kim, I. Im, J. Baek, Sung Hyuk Park, Jae Young Kim, J. J. Yang, H. Jang   +6 more
semanticscholar   +1 more source

Access Strategies for Resistive Random Access Memory (RRAM)

ECS Transactions, 2012
In an RRAM array, it is important to avoid sneak current paths that result in inadvertent, non-negligible voltage and current inputs to unselected cells. At the same time, care must be taken not to allow excessive voltages or currents to selected cells, which could result in damage.
Frederick T. Chen, Yu-Sheng Chen, Heng-Yuan Lee, Wei-Su Chen, Pei-Yi Gu, Tai-Yuan Wu, Chen-Han Tsai, Yi-Ying Liao, Pang-Shiu Chen, Shyh-Shyuan Sheu, Pi-Feng Chiu, Wen-Ping Lin, Chih-He Lin, Ming-Jinn Tsai, Tzu-Kun Ku   +14 more
openaire   +1 more source

GMRAM: giant magneto-resistance random-access memory

2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484), 2002
Giant Magneto-resistance Random-Access Memory (GMRAM) is a nonvolatile random access memory that uses magnetic multi-layers made of thin layers of common ferromagnetic materials to write digital data and the giant magneto-resistance (GMR) effect to read stored data. The direction of magnetization in the storage layer of the magnetic multi-layer is used
R.R. Katti, H. Kaakani
openaire   +1 more source

Novel graphene-based resistive random access memory

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016
This paper presents an overview of three works about graphene-based resistive random access memory (RRAM). The fabrication, device performance and working mechanism of graphene-inserted electrode RRAM, RRAM based on laser-scribed reduced graphene and gate-controlled graphene-electrode RRAM are introduced.
null Yu-Tao Li, null Hai-Ming Zhao, null He Tian, null Xue-Feng Wang, null Wen-Tian Mi, null Yi Yang, null Tian-Ling Ren   +6 more
openaire   +1 more source

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

Physica Status Solidi (a), 2019
Because conventional nonvolatile memory is limited by process technology and physical size, resistive random access memory (RRAM) gradually enters the field of view due to its simple structure, fast program/erase speed, low power consumption, and so on ...
Hong Wang, Xiaobing Yan
semanticscholar   +1 more source

Halide perovskites for resistive random-access memories

Journal of Materials Chemistry C, 2019
Halide-perovskites-based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because the switching material—halide perovskite—has received considerable attention in recent years owing to its unique and exotic electrical, optical, and structural properties.
Hyojung Kim, Ji Su Han, Sun Gil Kim, Soo Young Kim, Ho Won Jang   +4 more
openaire   +1 more source

Selector Failure Detection for Resistive Random Access Memories

2021 IEEE International Symposium on Information Theory (ISIT), 2021
The sneak path (SP) interference problem in resistive random access memory (ReRAM) severely affects the data storage reliability. Recent works showed that the occurrence of the SP is highly related to the selector failures (SFs) in the resistive memory arrays.
Guanghui Song, Kui Cai, Ce Sun, Xingwei Zhong, Jun Cheng   +4 more
openaire   +1 more source

Bio-Organic Based Resistive Switching Random-Access Memory

Solid State Phenomena, 2023
A non-volatile memory is a solid-state device that can retain data even power supply is terminated. It is an essential data storage device that serves as a backbone for the advancement of Internet-of-Things. There are various emerging non-volatile memory technologies in different technology-readiness levels, to replace the existing technologies with ...
Muhammad Awais, Feng Zhao, Kuan Yew Cheong   +2 more
openaire   +1 more source

Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array

IEEE Electron Device Letters, 2021
We demonstrate a 1MBit array of 1-Transistor-8-Resistive RAM (1T8R) memory fabricated using a foundry logic technology. Using a gradual SET/RESET programming scheme, sixteen conductance levels are stored in each RRAM, achieving 1T8R array with 4 bits per
E. Hsieh, X. Zheng, B. Le, Y. Shih, R. Radway, M. Nelson, S. Mitra, S. Wong   +7 more
semanticscholar   +1 more source

NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

ACS Nano, 2010
In this study, a NiO RRAM nanocapacitor array was fabricated on a graphene sheet, which was on a Nb-doped SrTiO(3) substrate containing terraces with a regular interval of about 100 nm and an atomically smooth surface. For the formation of the NiO RRAM nanocapacitor (Pt/NiO/graphene capacitor) array, an anodic aluminum oxide (AAO) nanotemplate with a ...
Son, JY, Shin, YH, Kim, H, Jang, HM
openaire   +3 more sources