Controlled oxidation levels in graphene oxide to achieve forming-free and analog resistive switching in RRAM [PDF]
Scientific ReportsIn the exploration of materials for neuromorphic computing, Graphene Oxide (GO) stands out as a promising organic candidate due to its low-cost fabrication, flexibility, and tunable chemical properties.
Alireza Moazzeni +3 more
doaj +2 more sources
Nanomaterials, 2021 In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias ...
Sobia Ali Khan +5 more
doaj +2 more sources
Multistate resistive switching in silver nanoparticle films [PDF]
Science and Technology of Advanced Materials, 2015 Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications.
Eric J Sandouk +2 more
doaj +2 more sources
A new opportunity for the emerging tellurium semiconductor: making resistive switching devices
Nature Communications, 2021 Resistive switching devices have great promise for a wide variety of technological applications. Here, Yang et al demonstrate that electrochemically induced tellurium filament can give rise to resistive switching, and show that devices based on this can ...
Yifei Yang +16 more
doaj +2 more sources
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes [PDF]
Advanced Functional Materials, 2023 The 2D insulating material hexagonal boron nitride (h‐BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large switching window. Metal filament
L. Völkel +10 more
semanticscholar +1 more source
Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode
Metals, 2021 In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device.
Hojeong Ryu, Sungjun Kim
doaj +1 more source
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
Nano Convergence, 2023 HfO_2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such ...
Jaewook Lee +7 more
semanticscholar +1 more source
The transformation of digital to analog resistance switching behavior in Bi2FeCrO6 thin films
Journal of Asian Ceramic Societies, 2021 Bi2FeCrO6 (BFCO) thin films were fabricated by sol-gel method. Digital and analog resistive switching behaviors were sequentially observed in Au/BFCO/FTO/Glass structure by applying a continuous cyclic voltage. By analyzing formation mechanism of the two
Yan-Ping Jiang +5 more
doaj +1 more source
Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device
Metals, 2021 In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaOx/indium tin oxide (ITO) memristor device.
Hojeong Ryu, Beomjun Park, Sungjun Kim
doaj +1 more source
Standards for the Characterization of Endurance in Resistive Switching Devices.
ACS Nano, 2021 Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors,
M. Lanza +35 more
semanticscholar +1 more source