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Tuning the resistive switching in tantalum oxide-based memristors by annealing
AIP Advances, 2020 A key step in engineering resistive switching is the ability to control the device switching behavior. Here, we investigate the possibility to tune the resistive switching of tantalum oxide (TaOx)-based memristors from a non-switchable state to a ...
Yang Li +10 more
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Tunable resistive switching in shales
Results in Physics, 2022 Electrically induced resistive switching is a subject of increasing scientific interest because it is a candidate for universal non-volatile memory. We demonstrate resistive switching in a natural reservoir shale. The resistance of the rocks is repeatedly switched between the high-resistance state and low-resistance state, being controlled by the ...
Xinyang Miao +5 more
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Scalable Al2O3–TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices
Advanced Electronic Materials, 2023 Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency.
Yang Li +7 more
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Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air [PDF]
, 2014 An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices
Chang, Yao-Feng +6 more
core +1 more source
Nanomaterials, 2021 In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias ...
Sobia Ali Khan +5 more
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How ligands affect resistive switching in solution-processed HfO2 nanoparticle assemblies [PDF]
, 2018 Advancement of resistive random access memory (ReRAM) requires fully understanding the various complex, defect-mediated transport mechanisms to further improve performance.
Wang, Jiaying +6 more
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Resistance switching memories are memristors [PDF]
Applied Physics A, 2011 All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive “fingerprint” characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v–i plane whose contour shape in general changes with ...
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Switching Power Universality in Unipolar Resistive Switching Memories [PDF]
Scientific Reports, 2016 AbstractWe investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices.
Kim, Jongmin +11 more
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Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer
Micromachines, 2020 In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer.
Junhyeok Choi, Sungjun Kim
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Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Advanced Materials Interfaces, 2023 To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang +8 more
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