Results 91 to 100 of about 1,933,006 (329)
Phase Diffusion in Single-Walled Carbon Nanotube Josephson Transistors [PDF]
, 2007 We investigate electronic transport in Josephson junctions formed by single-walled carbon nanotubes coupled to superconducting electrodes. We observe enhanced zero-bias conductance (up to 10e^2/h) and pronounced sub-harmonic gap structures in ...
Lau, C. N., Liu, G., Zhang, Y.
core +2 more sources
Emerging role of ARHGAP29 in melanoma cell phenotype switching
Molecular Oncology, EarlyView.This study gives first insights into the role of ARHGAP29 in malignant melanoma. ARHGAP29 was revealed to be connected to tumor cell plasticity, promoting a mesenchymal‐like, invasive phenotype and driving tumor progression. Further, it modulates cell spreading by influencing RhoA/ROCK signaling and affects SMAD2 activity. Rho GTPase‐activating protein
Beatrice Charlotte Tröster +3 more
wiley +1 more source
, 2018 Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly distinguished and
Khare, Neeraj, Munjal, Sandeep
core +1 more source
Random barrier double-well model for resistive switching in tunnel barriers [PDF]
, 2011 The resistive switching phenomenon in MgO-based tunnel junctions is attributed to the effect of charged defects inside the barrier. The presence of electron traps in the MgO barrier, that can be filled and emptied, locally modifies the conductance of the
Arabski, Jacek +8 more
core +4 more sources
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
Nature Communications, 2019 Silver/copper-filament-based resistive switching memory relies on the formation and disruption of a metallic conductive filament (CF) with relatively large surface-to-volume ratio. The nanoscale CF can spontaneously break after formation, with a lifetime
Wei Wang +7 more
semanticscholar +1 more source
Nanoscale Research Letters, 2020 In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential ...
Furqan Zahoor +2 more
semanticscholar +1 more source
Molecular Oncology, EarlyView.ERRFI1, a neural crest (NC)‐associated gene, was upregulated in melanoma and negatively correlated with the expression of melanocytic differentiation markers and the susceptibility of melanoma cells toward BRAF inhibitors (BRAFi). Knocking down ERRFI1 significantly increased the sensitivity of melanoma cells to BRAFi.
Nina Wang +8 more
wiley +1 more source
Transverse barrier formation by electrical triggering of a metal-to-insulator transition
Nature Communications, 2021 Resistive switching usually occurs by the formation of conducting filaments in the direction of current flow. Here the authors study an intriguing type of volatile metal-to-insulator resistive switching in (La,Sr)MnO3, which occurs by the formation of an
Pavel Salev +8 more
doaj +1 more source
Molecular Oncology, EarlyView.CDK11 inhibition stabilises the tumour suppressor p53 and triggers the production of an alternative p21WAF1 splice variant p21L, through the inactivation of the spliceosomal protein SF3B1. Unlike the canonical p21WAF1 protein, p21L is localised in the cytoplasm and has reduced cell cycle‐blocking activity.
Radovan Krejcir +12 more
wiley +1 more source
Resistive Switching in Memristive Electrochemical Metallization Devices
, 2017 We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system.
Dirkmann, Sven, Mussenbrock, Thomas
core +2 more sources