Results 11 to 20 of about 1,933,006 (329)
Resistive switching in nano-structures [PDF]
Scientific Reports, 2018 Solid state memory and switching devices aimed at replacing the flash memory technology operate by switching from the high to low resistance when conductive filaments are created in response to the electric pulse. The filaments are identified with either
V. G. Karpov, D. Niraula
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Nanomaterials, 2022 With the big data and artificial intelligence era coming, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of ...
Tong Chen +7 more
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HfO2-based resistive switching memory devices for neuromorphic computing
Neuromorph. Comput. Eng., 2022 HfO2-based resistive switching memory (RRAM) combines several outstanding properties, such as high scalability, fast switching speed, low power, compatibility with complementary metal-oxide-semiconductor technology, with possible high-density or three ...
S. Brivio, Sabina Spiga, D. Ielmini
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Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films
Nanomaterials, 2020 We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition.
Roman V. Tominov +7 more
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Tuning the resistive switching in tantalum oxide-based memristors by annealing
AIP Advances, 2020 A key step in engineering resistive switching is the ability to control the device switching behavior. Here, we investigate the possibility to tune the resistive switching of tantalum oxide (TaOx)-based memristors from a non-switchable state to a ...
Yang Li +10 more
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Tunable resistive switching in shales
Results in Physics, 2022 Electrically induced resistive switching is a subject of increasing scientific interest because it is a candidate for universal non-volatile memory. We demonstrate resistive switching in a natural reservoir shale. The resistance of the rocks is repeatedly switched between the high-resistance state and low-resistance state, being controlled by the ...
Xinyang Miao +5 more
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Scientific Reports, 2021 TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices.
Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
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Scalable Al2O3–TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices
Advanced Electronic Materials, 2023 Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency.
Yang Li +7 more
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Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air [PDF]
, 2014 An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices
Chang, Yao-Feng +6 more
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How ligands affect resistive switching in solution-processed HfO2 nanoparticle assemblies [PDF]
, 2018 Advancement of resistive random access memory (ReRAM) requires fully understanding the various complex, defect-mediated transport mechanisms to further improve performance.
Wang, Jiaying +6 more
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