Results 11 to 20 of about 84,204 (350)

Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles [PDF]

Scientific Reports, 2021
TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices.
Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
doaj   +2 more sources

Controlled oxidation levels in graphene oxide to achieve forming-free and analog resistive switching in RRAM [PDF]

Scientific Reports
In the exploration of materials for neuromorphic computing, Graphene Oxide (GO) stands out as a promising organic candidate due to its low-cost fabrication, flexibility, and tunable chemical properties.
Alireza Moazzeni, Hadi Riyahi Madvar, Samaneh Hamedi, Zoheir Kordrostami   +3 more
doaj   +2 more sources

Multistate resistive switching in silver nanoparticle films [PDF]

Science and Technology of Advanced Materials, 2015
Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications.
Eric J Sandouk, James K Gimzewski, Adam Z Stieg   +2 more
doaj   +2 more sources

Resistive switching in nano-structures [PDF]

Scientific Reports, 2018
Solid state memory and switching devices aimed at replacing the flash memory technology operate by switching from the high to low resistance when conductive filaments are created in response to the electric pulse. The filaments are identified with either
V. G. Karpov, D. Niraula
doaj   +3 more sources

Irregular Resistive Switching Behaviors of Al₂O₃-Based Resistor with Cu Electrode

Metals, 2021
In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device.
Hojeong Ryu, Sungjun Kim
doaj   +1 more source

TCAD Simulation of Resistive Switching Devices: Impact of ReRAM Configuration on Neuromorphic Computing. [PDF]

Nanomaterials (Basel)
Kim S, Lee J.
europepmc   +2 more sources

The transformation of digital to analog resistance switching behavior in Bi2FeCrO6 thin films

Journal of Asian Ceramic Societies, 2021
Bi2FeCrO6 (BFCO) thin films were fabricated by sol-gel method. Digital and analog resistive switching behaviors were sequentially observed in Au/BFCO/FTO/Glass structure by applying a continuous cyclic voltage. By analyzing formation mechanism of the two
Yan-Ping Jiang, Hang-Lv Zhou, Xin-Gui Tang, Qiu-Xiang Liu, Wen-Hua Li, Zhen-Hua Tang   +5 more
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Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaO_x/ITO Device

Metals, 2021
In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaOx/indium tin oxide (ITO) memristor device.
Hojeong Ryu, Beomjun Park, Sungjun Kim
doaj   +1 more source

Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN_x:H Resistive Switching Memory by the Transient Current

Nanomaterials, 2022
With the big data and artificial intelligence era coming, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of ...
Tong Chen, Kangmin Leng, Zhongyuan Ma, Xiaofan Jiang, Kunji Chen, Wei Li, Jun Xu, Ling Xu   +7 more
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Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films

Nanomaterials, 2020
We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition.
Roman V. Tominov, Zakhar E. Vakulov, Vadim I. Avilov, Daniil A. Khakhulin, Aleksandr A. Fedotov, Evgeny G. Zamburg, Vladimir A. Smirnov, Oleg A. Ageev   +7 more
doaj   +1 more source