Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties
Advanced Electronic Materials, 2023 Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations and grain ...
Hongyi Dou +8 more
doaj +1 more source
Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory [PDF]
Materials, 2017 Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n+ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device’s Si bottom electrode had a higher dopant concentration (As ion > 1019 cm−3) than the Ni/SiNx/n+ Si device; both unipolar and bipolar ...
Sungjun Kim +5 more
openaire +3 more sources
Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3
AIP Advances, 2012 Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application.
Xi Zou +7 more
doaj +1 more source
Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films
Journal of Materiomics, 2018 Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory (ReRAM).
Wanheng Lu +3 more
doaj +1 more source
Spectroscopic indications of tunnel barrier charging as the switching mechanism in memristive devices [PDF]
, 2017 Resistive random access memory is a promising, energy-efficient, low-power “storage class memory” technology that has the potential to replace both flash storage and on-chip dynamic memory.
Asamitsu +71 more
core +1 more source
Characterization and modeling of resistive switching phenomena in IGZO devices
AIP Advances, 2022 This study explores the resistive switching phenomena present in 4 µm2 amorphous Indium–Gallium–Zinc Oxide (IGZO) memristors. Despite being extensively reported in the literature, not many studies detail the mechanisms that dominate conduction on the ...
G. Carvalho +5 more
doaj +1 more source
Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights
IEEE Journal of the Electron Devices Society, 2021 A Ferroelectric, two-terminals, analog memristive device is fabricated with a Back-End-Of-Line, CMOS compatible process. A bilayer composed of a ferroelectric material, HfZrO4 (HZO) and a semiconducting oxide, WOx layer is comprised between two TiN ...
L. Begon-Lours +10 more
doaj +1 more source
Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory [PDF]
, 2019 A detailed understanding of quantization conductance (QC), their correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements.
Deswal, Sweety +3 more
core +2 more sources
Resistive Switching‐based Electro‐Optical Modulation [PDF]
Advanced Optical Materials, 2014 [No abstract available]
Battal, E., Ozcan, A., Okyay, A., K.
openaire +4 more sources
CuO/ZnO memristors via oxygen or metal migration controlled by electrodes
AIP Advances, 2016 We carry out a comparative study on resistive switching in CuO/ZnO bilayer films; both samples grown Pt and Ag electrodes show bipolar switching behaviors.
Yong Huang +7 more
doaj +1 more source