Results 51 to 60 of about 1,933,006 (329)

Reliability of analog resistive switching memory for neuromorphic computing

, 2020
As artificial intelligence calls for novel energy-efficient hardware, neuromorphic computing systems based on analog resistive switching memory (RSM) devices have drawn great attention recently.
Meiran Zhao, B. Gao, Jianshi Tang, He Qian, Huaqiang Wu   +4 more
semanticscholar   +1 more source

Resistive Switching in Graphene Oxide

Frontiers in Materials, 2020
The search and investigation of resistive switching materials, the most consolidated form of solid-state memristors, has become one of the fastest growing areas in the field of electronics.
Francisco J. Romero, Alejando Toral, Alberto Medina-Rull, Carmen Lucia Moraila-Martinez, Diego P. Morales, Akiko Ohata, Andres Godoy, Francisco G. Ruiz, Noel Rodriguez   +8 more
doaj   +1 more source

Unipolar Resistance Switching in Amorphous High-k dielectrics Based on Correlated Barrier Hopping Theory

, 2009
We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors.
Gao, Xu, Guo, Hongxuan, Guo, Kang, Li, Kui, Liu, Zhiguo, Xia, Yidong, Xu, Bo, Yin, Jiang   +7 more
core   +1 more source

Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices [PDF]

, 2014
Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated.
Bard A. J., C. H. de Groot, L. Jiang, L. Zhong, R. Huang, Sze S. M.   +5 more
core   +1 more source

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Advances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, Yi Wang   +4 more
doaj   +1 more source

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

Micromachines, 2020
In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method.
Xiaofeng Zhao, Ping Song, Huiling Gai, Yi Li, Chunpeng Ai, Dianzhong Wen   +5 more
doaj   +1 more source

Dynamics of an Electrically Driven Phase Transition in Ca2RuO4 Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition

Advanced Electronic Materials, 2023
In Mott‐type resistive switching phenomena, which are based on the metal–insulator transition in strongly correlated materials, the presence of an abrupt temperature‐driven transition in the material is considered essential for achieving high‐speed and ...
Keiji Tsubaki, Atsushi Tsurumaki‐Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi   +5 more
doaj   +1 more source

Stochastic Memristive Devices for Computing and Neuromorphic Applications

, 2013
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems.
Choi, Shinhyun, Gaba, Siddharth, Lu, Wei, Sheridan, Patrick, Zhou, Jiantao   +4 more
core   +1 more source

Hysteresis Switching Loops in Ag-manganite memristive interfaces [PDF]

, 2010
Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields.
Baek I. G., F. Gomez-Marlasca, M. J. Rozenberg, M. J. Sánchez, N. Ghenzi, P. Levy, Strukov B.   +6 more
core   +3 more sources

Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models

IEEE Transactions on Circuits and Systems Part 1: Regular Papers, 2020
Bipolar resistive switching (BRS) cells based on the valence change mechanism show great potential to enable the design of future non-volatile memory, logic and neuromorphic circuits and architectures.
C. Bengel, A. Siemon, F. Cüppers, S. Hoffmann‐Eifert, A. Hardtdegen, M. von Witzleben, L. Hellmich, R. Waser, S. Menzel   +8 more
semanticscholar   +1 more source