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Resistive switching memory using biomaterials
Journal of Electroceramics, 2017Resistive switching memory (ReRAM) is emerging as a developed technology for a new generation of non-volatile memory devices. Natural organic biomaterials are potential elements of environmentally-benign, biocompatible, and biodegradable electronic devices for information storage and resorbable medical implants.
Niloufar Raeis-Hosseini, Jang-Sik Lee
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Redox-Based Resistive Switching Memories
Journal of Nanoscience and Nanotechnology, 2012This review covers resistive random access memories which utilize redox processes and ionic motion on the nanoscale as their storage principle (ReRAM). Generic aspects are described in order to provide the physics and chemistry background for the explanation of the microscopic switching mechanism and of the high nonlinearity in the switching kinetics ...
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Resistive Switches and Memories from Silicon Oxide
Nano Letters, 2010Because of its excellent dielectric properties, silicon oxide (SiO(x)) has long been used and considered as a passive, insulating component in the construction of electronic devices. In contrast, here we demonstrate resistive switches and memories that use SiO(x) as the sole active material and can be implemented in entirely metal-free embodiments ...
Jun, Yao +4 more
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ZrN-Based Flexible Resistive Switching Memory
IEEE Electron Device Letters, 2020In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies.
Dayanand Kumar +3 more
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Complementary resistive switches for passive nanocrossbar memories
Nature Materials, 2010On the road towards higher memory density and computer performance, a significant improvement in energy efficiency constitutes the dominant goal in future information technology. Passive crossbar arrays of memristive elements were suggested a decade ago as non-volatile random access memories (RAM) and can also be used for reconfigurable logic circuits.
Eike, Linn +3 more
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Resistance random access memory switching mechanism
Journal of Applied Physics, 2007The properties of Pr0.7Ca0.3MnO3 resistance random access memory devices have been studied in terms of electrical pulse width, pulse polarity, film thickness, resistivity distribution, temperature dependence, device impedance, and dynamics property. Based on the experimental data it is concluded that the resistance increase is due to localization of ...
Sheng T. Hsu +2 more
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Metal Oxide Resistive Switching Memory
2011Electrically triggered resistance switching phenomenon in metal oxide was extensively explored for the promising potential as an emerging nonvolatile memory. Prototype chips of large-scale array based on metal oxide memory are currently under development in industry.
Shimeng Yu +2 more
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Resistance switching memory in perovskite oxides
Annals of Physics, 2015Abstract The resistance switching behavior has recently attracted great attentions for its application as resistive random access memories (RRAMs) due to a variety of advantages such as simple structure, high-density, high-speed and low-power. As a leading storage media, the transition metal perovskite oxide owns the strong correlation of electrons ...
Z.B. Yan, J.-M. Liu
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Electrical Characterization of Resistive Switching Memories
AIP Conference Proceedings, 2011Resistive switching memory (also known as RRAM for resistive random access memory) is considered a promising candidate for the next‐generation nonvolatile memories. This paper summarizes the electrical characterization methodologies for RRAM performance evaluation and the investigation of resistive switching mechanisms.
An Chen +6 more
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Interfacial Metal–Oxide Interactions in Resistive Switching Memories
ACS Applied Materials & Interfaces, 2017Metal oxides are commonly used as electrolytes for redox-based resistive switching memories. In most cases, non-noble metals are directly deposited as ohmic electrodes. We demonstrate that irrespective of bulk thermodynamics predictions an intermediate oxide film a few nanometers in thickness is always formed at the metal/insulator interface, and this ...
Deok-Yong Cho +4 more
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