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Resistive switching memory: observations with scanning probe microscopy
Nanoscale, 2011Recent advances in information technology require higher-speed and higher-density memory devices. In the past decade, resistance switching memory has emerged as a powerful alternative to existing charge-storage-based, non-volatile devices. Despite the extensive research, much of the underlying switching/conduction mechanism is still unknown and ...
Min Hwan, Lee, Cheol Seong, Hwang
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Emerging memories: resistive switching mechanisms and current status
Reports on Progress in Physics, 2012The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied.
Doo Seok, Jeong +6 more
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Biodegradable resistive switching memory based on magnesium difluoride
Nanoscale, 2016This study presents a new type of resistive switching memory device that can be used in biodegradable electronic applications. The biodegradable device features magnesium difluoride as the active layer and iron and magnesium as the corresponding electrodes. This is the first report on magnesium difluoride as a resistive switching layer.
Zhiping, Zhang +2 more
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Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory
Journal of Electronic Materials, 2017To efficiently increase the capacity of resistive switching random-access memory (RRAM) while maintaining the same area, a vertical structure similar to a vertical NAND flash structure is needed. In addition, the sneak-path current through the half-selected neighboring memory cell should be mitigated by integrating a selector device with each RRAM cell.
Sungyeon Ryu +2 more
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IEEE Transactions on Device and Materials Reliability, 2013
This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104.
Hee-Dong Kim +4 more
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This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104.
Hee-Dong Kim +4 more
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Schottky-Barrier Resistive Memory with Highly Uniform Switching
Journal of Nanoscience and Nanotechnology, 2014Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-microW power and highly uniform current distributions (on-off ratio > 1000x) are realized. The Schottky barrier at Ni/GeO(x) interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach
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Reset–Set Instability in Unipolar Resistive-Switching Memory
IEEE Electron Device Letters, 2010Unipolar resistive-switching memory attracts a strong interest as high-density nonvolatile memory for future technology nodes. The high-to-low-resistance change is achieved by the set operation, whereas the reverse transition is obtained by the reset process.
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Atomic crystals resistive switching memory
Chinese Physics B, 2017Chunsen Liu, David Wei Zhang, Peng Zhou
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