Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction [PDF]
Nanoscale Research Letters, 2022 A vertical GaN power MOSFET featuring an integrated fin-shaped non-junction diode (FDMOS) is proposed to improve reverse conduction and switching characteristics.
Tao Sun +7 more
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A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching [PDF]
Micromachines, 2023 A novel split-gate SiC MOSFET with an embedded MOS-channel diode for enhanced third-quadrant and switching performances is proposed and studied using TCAD simulations in this paper.
Ping Li +3 more
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A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance [PDF]
MicromachinesIn this paper, a novel asymmetric trench SiC MOSFET with a Poly-Si/SiC heterojunction diode (HJD-ATMOS) is designed to improve its reverse conduction characteristics and switching performance.
Yiren Yu +4 more
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Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage [PDF]
IEEE Access, 2023 Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses.
Dai-Jie Lin +5 more
doaj +2 more sources
Linear Equivalent Model for VHF Class Φ2 Inverter Based on Spectrum Quantification Method to Reduce GaN Reverse Conduction Loss [PDF]
IEEE Access, 2021 Reverse conduction loss of GaN high electron mobility transistors (HEMTs) in very high frequency (VHF) converters is non-neglectable due to the absence of body diode.
Desheng Zhang +7 more
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Accurate Measurement of Dynamic on-State Resistances of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter [PDF]
, 2020 Because of trapped charges in GaN transistor structure, device dynamic ON-state resistance RDSon is increased when it is operated in high frequency switched power converters, in which device is possibly operated by zero voltage switching (ZVS) to reduce ...
Evans, Paul +4 more
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High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss [PDF]
IEEE Journal of the Electron Devices Society, 2022 A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun +7 more
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Influence of Reverse Conduction on Dead Time Selection in GaN-Based Inverters for AC Motor Drives
IEEE AccessAlthough Gallium Nitride (GaN) Field Effect Transistor (FET) devices have found extensive application in DC-DC converters, their utilization in inverter motor drives remains an evolving area of study.
S. Musumeci +5 more
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Design and TCAD Simulation of GaN P-i-N Diode with Multi-Drift-Layer and Field-Plate Termination Structures [PDF]
MicromachinesVertical GaN P-i-N diodes exhibit excellent high-voltage performance, fast switching speed, and low conduction losses, making them highly attractive for power applications.
Zhibo Yang +4 more
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Investigation of the Relationship between Reverse Current of Crystalline Silicon Solar Cells and Conduction of Bypass Diode [PDF]
International Journal of Photoenergy, 2012 In the process of crystalline silicon solar cells production, there exist some solar cells whose reverse current is larger than 1.0 A because of silicon materials and process.
Hong Yang, He Wang, Minqiang Wang
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